公开(公告)号：WO02098788A3

公开(公告)日：2003-10-09

申请号：PCT/US0217216

申请日：2002-06-04

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D ,  BURNS DAVID W

IPC: B81B3/00 ,  B81C1/00 ,  C23F1/00

CPC classification number: B81C1/00595 ,  B81B2201/0264 ,  B81C2201/0164

Abstract: A method of making a silicon micromechanical structure, from a lightly doped silicon substrate having less than cm boron therein. A p+ layer having a boron content of greater than 7 x 10 cm and a germanium content of about 1 x 10 cm is placed on the substrate. A mask is formed on the second side, followed by etching to the p+ layer. An insulator is put on the p+ layer and an electronic component is fabricated thereon. Preferred micromechanical structures are pressure sensors, cantilevered accelerometers, and dual web biplane accelerometers. Preferred electronic components are dielectrically isolated piezoresistors and resonant microbeams. The method may include the step of forming a lightly doped layer on the p+ layer to form a buried p+ layer prior to etching.

Abstract translation: 从其中具有小于5×10 19 cm 3的硼的轻掺杂硅衬底制造硅微机械结构的方法。 具有大于7×10 19 cm -3的硼含量和约1×10 21 cm -3的锗含量的p +层被放置在衬底上。 在第二面上形成掩模，然后蚀刻到p +层。 将绝缘体放在p +层上，并在其上制造电子部件。 优选的微机械结构是压力传感器，悬臂加速度计和双网双平面加速度计。 优选的电子部件是介电离子压敏电阻器和共振微束。 该方法可以包括在p +层上形成轻掺杂层以在蚀刻之前形成掩埋的p +层的步骤。