公开(公告)号：KR20200133377A

公开(公告)日：2020-11-27

申请号：KR20207030238

申请日：2019-03-15

Applicant: HOYA CORP

Inventor： MAEDA HITOSHI ,  NOZAWA OSAMU ,  HORIGOME YASUTAKA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/72 ,  G03F1/84

Abstract: 마스크블랭크(100)는, 투광성기판(1) 위에위상시프트막(2)을구비하고, 해당위상시프트막(2)이, 하층(21), 중간층(22) 및상층(23)의순으로적층된구조를포함한다. 하층(21)이질화규소계재료로형성되고, 중간층(22)이산화질화규소계재료로형성되며, 상층(23)이산화규소계재료로형성된다. 하층(21)이중간층(22) 및상층(23)보다도질소의함유량이많고,상층(23)이중간층(22) 및하층(21)보다도산소의함유량이많다. 위상시프트막(2)의전체막 두께에대한중간층(22)의막 두께의비율이 0.15 이상이며, 위상시프트막(2)의전체막 두께에대한상층(21)의막 두께의비율이 0.10 이하이다.

公开(公告)号：SG11201811413QA

公开(公告)日：2019-02-27

申请号：SG11201811413Q

申请日：2017-06-22

Applicant: HOYA CORP

Inventor： SHISHIDO HIROAKI ,  HORIGOME YASUTAKA

IPC: G03F1/58 ,  G03F1/78 ,  H01L21/3065

Abstract: This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom% or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom%, and has a thickness that is not less than twice the thickness of the high nitride layer.

公开(公告)号：SG11202002928WA

公开(公告)日：2020-04-29

申请号：SG11202002928W

申请日：2018-11-20

Applicant: HOYA CORP

Inventor： NOZAWA OSAMU ,  HORIGOME YASUTAKA ,  MAEDA HITOSHI

IPC: G03F1/32 ,  C23C14/08 ,  G03F7/20

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

公开(公告)号：SG11202009172VA

公开(公告)日：2020-10-29

申请号：SG11202009172V

申请日：2019-03-15

Applicant: HOYA CORP

Inventor： MAEDA HITOSHI ,  NOZAWA OSAMU ,  HORIGOME YASUTAKA

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/74

Abstract: A mask blank has a phase shift film of a structure in which a lower layer, an intermediate layer, and an upper layer are layered in this order. The lower layer is formed of a silicon-nitride-based material. The intermediate layer is formed of silicon-oxynitride-based material. The upper layer is formed of a silicon-oxide-based material. The nitrogen content of the lower layer is greater than those of the intermediate and the upper layers. The oxygen content of the upper layer is greater than those of the intermediate and the lower layers. The ratio of the film thickness of the intermediate layer with respect to the overall film thickness of the phase shift film is 0.15 or more, and the ratio of the film thickness of the upper layer with respect to the overall film thickness of the phase shift film is 0.10 or more.

公开(公告)号：SG11202007975QA

公开(公告)日：2020-09-29

申请号：SG11202007975Q

申请日：2019-01-08

Applicant: HOYA CORP

Inventor： MAEDA HITOSHI ,  OHKUBO RYO ,  HORIGOME YASUTAKA

IPC: G03F1/32 ,  G03F7/20

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.