公开(公告)号：KR20100061435A

公开(公告)日：2010-06-07

申请号：KR20100046664

申请日：2010-05-18

Applicant: HOYA CORP

Inventor： SANO MICHIAKI ,  IMURA KAZUHISA ,  MITSUI MASARU

IPC: G03F1/50 ,  G03F1/54 ,  G03F1/76 ,  H01L21/027

CPC classification number: G03F1/54 ,  G03F1/08 ,  G03F1/32 ,  G03F1/50 ,  G03F1/76 ,  H01L21/0276

Abstract: PURPOSE: A gray tone mask blank, a manufacturing method of a gray tone mask using thereof, the gray tone mask, and a pattern transferring method using thereof are provided to obtain an accurate CD of a pattern formed on a mask, and to reduce the change of the pattern. CONSTITUTION: A gray tone mask blank comprises the following: a light-shielding layer(25) pattern formed on a transparent substrate(24); a semi-transparent layer(26) in the front side of the light-shielding layer; and a resist film(27) formed on the semi-transparent layer. The composition of the light-shielding layer changes to the film thickness direction. The surface reflection ratio of the resist film reduces for a laser lithography light with the wavelength of 300~450 nanometers.

Abstract translation: 目的：提供灰色调掩模空白，使用其的灰度调色掩模的制造方法，灰度色调掩模和使用其的图案转印方法，以获得在掩模上形成的图案的精确的CD，并且减少 模式的变化 构成：灰色掩模坯料包括：形成在透明基板（24）上的遮光层（25）图案; 在遮光层的前侧的半透明层（26）; 和形成在半透明层上的抗蚀剂膜（27）。 遮光层的组成变为膜厚方向。 对于波长为300〜450纳米的激光光刻光，抗蚀剂膜的表面反射率降低。

公开(公告)号：JP2009229868A

公开(公告)日：2009-10-08

申请号：JP2008075800

申请日：2008-03-24

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  IMURA KAZUHISA

IPC: G03F1/54

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a gray tone mask that suppresses formation of white edges. SOLUTION: The method of manufacturing a gray tone mask includes a first patterning process of forming a first film on a transparent substrate, forming a first resist pattern thereupon, and etching the first film, by using the first resist pattern as a mask to form a first film pattern; a process of forming a second film on a surface, including the first film pattern; and a second patterning process of forming a second resist pattern on the second film and etching at least the second film using the second resist pattern as a mask to form a second film pattern. The first film is a laminated film of a light-shielding film and an antireflection functional film, the second film is a translucent film, and materials of the first film and second film are so selected that the translucent film has nearly the same etching speed as, or a faster etching speed than the antireflection function film for an etchant used in the etching process. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供抑制白边形成的灰色调掩模的制造方法。 解决方案：制造灰度色调掩模的方法包括在透明基板上形成第一膜的第一图案化工艺，在其上形成第一抗蚀剂图案，并通过使用第一抗蚀剂图案作为掩模蚀刻第一膜 形成第一个胶片图案; 在包括第一膜图案的表面上形成第二膜的工艺; 以及在第二膜上形成第二抗蚀剂图案并使用第二抗蚀剂图案至少蚀刻第二膜作为掩模以形成第二膜图案的第二图案化工艺。 第一膜是遮光膜和抗反射功能膜的层叠膜，第二膜是半透膜，第一膜和第二膜的材料被选择成使得半透膜与蚀刻速度几乎相同 ，或比蚀刻工艺中使用的蚀刻剂的抗反射功能膜更快的蚀刻速度。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009048186A

公开(公告)日：2009-03-05

申请号：JP2008190353

申请日：2008-07-23

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： YOSHIDA KOICHIRO ,  IMURA KAZUHISA

IPC: G01N21/59 ,  G03F1/54 ,  G03F1/68 ,  G03F1/84 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask by which the photomask can be evaluated by reflecting on factors by an optical system of an exposure machine and various factors such as spectral characteristics of a light source and developing characteristics of a resist, and a pattern feature and a raw material or thickness of a film to be formed in a semitransmitting portion can appropriately be determined. SOLUTION: The method includes: a step of carrying out a test exposure on a test mask having a predetermined pattern formed thereon by using an exposure means that reproduces exposure conditions simulating actual exposure conditions, acquiring a transmitted light pattern of the test mask by an imaging means and obtaining transmitted light pattern data based on the acquired transmitted light pattern of the test mask; and a step of obtaining an effective transmittance under the exposure conditions based on the transmitted light pattern data. The feature of the region and the raw material or thickness of the film to be formed in the region are determined based on the effective transmittance. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造光掩模的方法，通过该光掩模的制造可以通过曝光机的光学系统的因素进行反射来评估光掩模，并且可以考虑各种因素，例如光源的光谱特性和显影特性 可以适当地确定抗蚀剂，图案特征以及要在半透射部分中形成的膜的原材料或厚度。 解决方案：该方法包括：通过使用曝光装置对模拟了预定图案的测试掩模进行测试曝光的步骤，该曝光装置再现模拟实际曝光条件的曝光条件，获取测试掩模的透射光图案 通过成像装置获得基于所获取的测试掩模的透射光图案的透射光图案数据; 以及基于透射光图案数据在曝光条件下获得有效透射率的步骤。 基于有效透射率确定区域的特征以及要在区域中形成的膜的原材料或厚度。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008310367A

公开(公告)日：2008-12-25

申请号：JP2008249334

申请日：2008-09-27

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMURA KAZUHISA ,  SANO MICHIAKI

IPC: G02F1/13 ,  G02F1/1368 ,  G03F1/54 ,  G03F1/70 ,  H01L21/00 ,  H01L21/027 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a gray tone mask of a halftone film type with which a high-quality TFT can be manufactured. SOLUTION: The gray tone mask for manufacturing a thin film transistor substrate has a thin film transistor substrate pattern including a light-shielding part, a light-transmitting part and a semitransmitting part formed by patterning a semitransmitting film and a light-shielding film formed on a transparent substrate, and the mask is used for forming a resist pattern in which a channel forming region is made thinner than source and drain forming regions on the thin film transistor substrate. In the thin film transistor substrate pattern, the patterns corresponding to the source and the drain are formed of the light-shielding part; the pattern corresponding to the channel part is formed of the semitransmitting part; the light-shielding part includes the semitransmitting film layered on at least a part of the light-shielding film formed on the transparent substrate; and the semitransmitting part comprises the semitransmitting film formed on the transparent substrate. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供可以制造高质量TFT的半色调膜类型的灰度调色掩模。 解决方案：用于制造薄膜晶体管基板的灰度调色剂掩模具有薄膜晶体管基板图案，该薄膜晶体管基板图案包括遮光部分，透光部分和通过图案化半透膜和遮光膜形成的半透射部分 薄膜形成在透明基板上，并且掩模用于形成其中沟道形成区域比薄膜晶体管基板上的源极和漏极形成区域薄的抗蚀剂图案。 在薄膜晶体管基板图案中，与源极和漏极相对应的图案由遮光部分形成; 对应于通道部分的图案由半透射部分形成; 遮光部分包括层叠在形成在透明基板上的遮光膜的至少一部分上的半透膜; 并且半透射部分包括形成在透明基板上的半透膜。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2003100846A

公开(公告)日：2003-04-04

申请号：JP2001297897

申请日：2001-09-27

Applicant: HOYA CORP

Inventor： HASHIGUCHI KOICHI ,  IMURA KAZUHISA

IPC: B65G49/06 ,  G03F1/76 ,  G03F7/20 ,  H01L21/027 ,  H01L21/677 ,  H01L21/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To deliver a substrate while protecting it against a flaw or adhesion of a particle. SOLUTION: The supporting part 521 of a holding member 52 on the carrying truck 100 side and the supporting part 201 of a holding member 200 on the processing system side are arranged to fit each other in the plan view so that they can support the same substrate W simultaneously. When the substrate W is transferred from the holding member 200 to the holding member 52, the supporting part 521 scoops up the substrate W supported by the supporting part 201 from below. When the substrate W is transferred from the holding member 52 to the holding member 200, the holding member 52 descends toward the holding member 200 so that the substrate W soft lands on the supporting part 201.

公开(公告)号：JP2009229893A

公开(公告)日：2009-10-08

申请号：JP2008076165

申请日：2008-03-24

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： SANO MICHIAKI ,  IMURA KAZUHISA

IPC: G03F1/00 ,  G03F1/68 ,  G03F1/80

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a multi-gradation photomask that has small restriction on selection of a material for a light shield film. SOLUTION: In the method of manufacturing the multi-gradation photomask, having the light-shielding film 2 and a translucent film 4 on a transparent substrate 1, since the shape of the translucent film 4 is formed by a lift-off to eliminate an etching stage for the translucent film 4, there is no need for the light-shielding film 2 to have resistance for an etching gas or an etchant of the translucent film 4, so that restrictions regarding the selection of a material for the light-shielding film 2 becomes few. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造对于遮光膜的材料的选择具有较小限制的多层次光掩模的方法。 解决方案：在透明基板1上具有遮光膜2和半透明膜4的多层次光掩模的制造方法中，由于透光性膜4的形状通过剥离形成 消除半导体膜4的蚀刻阶段，不需要遮光膜2对半导体膜4的蚀刻气体或蚀刻剂具有阻力，因此对于用于发光的材料的选择的限制， 屏蔽膜2变少。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2005317929A

公开(公告)日：2005-11-10

申请号：JP2005069133

申请日：2005-03-11

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMURA KAZUHISA

IPC: G03F7/30 ,  G03F7/00 ,  G03F7/26 ,  G03F7/42 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method of peeling a positive resist film which requires no special management prescribed by the Fire Service Law and various environmental laws, enables processing with low cost, and requires no large-scale processing apparatus for a large substrate.
SOLUTION: A substrate has a positive resist film, and the surface of the resist film is exposed and developed to form a resist pattern. After a thin film is etched with the resist pattern serving as a mask, the resist film is entirely irradiated with exposure light and brought into contact with developer, so that the patterned resist film is peeled off.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供剥离由“消防法”和各种环境规定规定的特殊管理的正性抗蚀剂膜的方法，能够以低成本进行处理，并且不需要大规模的处理装置 大基材。 解决方案：衬底具有正的抗蚀剂膜，并且抗蚀剂膜的表面被曝光和显影以形成抗蚀剂图案。 用作为掩模的抗蚀剂图案蚀刻薄膜后，将抗蚀剂膜全部用曝光光照射并与显影剂接触，从而剥离图案化的抗蚀剂膜。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005037933A

公开(公告)日：2005-02-10

申请号：JP2004190755

申请日：2004-06-29

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMURA KAZUHISA ,  SANO MICHIAKI

IPC: G02F1/1368 ,  G03F1/68 ,  G03F1/80 ,  H01L21/336 ,  H01L29/786 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a gray tone mask of a half tone film type by which a high-quality TFT can be manufactured. SOLUTION: The method for manufacturing a gray tone mask having a pattern comprising a light shielding part, a light transmitting part and a light semitransmitting part is carried out in the following steps. A mask blank having a light semitransmitting film 22 and a light shielding film 23 successively formed on a transparent substrate 21 is prepared. A resist pattern 24a in a region corresponding to the light shielding part is formed on the mask blank, and the light shielding film 23 is etched by using the resist pattern 24a as a mask to form the light shielding part on the light semitransmitting film 22. Then a resist pattern 24b is formed in a region containing at least the light semitransmitting part, and the light semitransmitting film 22 is etched by using the resist pattern 24b as a mask to form the light semitransmitting part and the light transmitting part. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造可以制造高质量TFT的半色调胶片类型的灰度色调掩模的方法。 解决方案：用于制造具有包括遮光部分，透光部分和光半透射部分的图案的灰度调色剂掩模的方法在以下步骤中进行。 准备具有依次形成在透明基板21上的发光半导体膜22和遮光膜23的掩模坯料。 在遮光板上形成与遮光部相对应的区域的抗蚀剂图案24a，通过使用抗蚀剂图案24a作为掩模对遮光膜23进行蚀刻，以在光透射膜22上形成遮光部。 然后在至少包含光半透射部分的区域中形成抗蚀剂图案24b，并且通过使用抗蚀剂图案24b作为掩模来蚀刻光半透膜22以形成光半透射部分和透光部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005024730A

公开(公告)日：2005-01-27

申请号：JP2003188242

申请日：2003-06-30

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： IMURA KAZUHISA

IPC: G03F1/68 ,  G03F1/80 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a gray tone mask of a halftone film type with which a high-quality TFT can be manufactured.
SOLUTION: The method includes processes of: preparing a mask blank having a semitransmitting film 22 and a light shielding film 23 successively layered on a transparent substrate 21; exposing a resist film including a step of forming a resist film on the mask blank and subjecting the part where a semitransmitting part is to be formed to exposure along a pattern smaller than the resolution limit of the exposure apparatus for the pattern exposure of the resist film; developing to form a resist pattern 24a having different film remaining rates of the resist between in the part where the light shielding part is to be formed and in the part where the semitransmitting part is to be formed; etching the light shielding film 23 and the semitransmitting film 22 by using the resist pattern 24a as a mask to form a light transmitting part; removing only the resist pattern remaining on the semitransmitting part; and etching the light shielding film 23a by using the remaining resist pattern as a mask to form a semitransmitting part.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造可以制造高品质TFT的半色调薄膜类型的灰度调色剂的方法。 解决方案：该方法包括以下步骤：制备具有连续层叠在透明基板21上的半透膜22和遮光膜23的掩模坯料; 曝光抗蚀剂膜，包括在掩模板上形成抗蚀剂膜的步骤，并且使形成半导体部分的部分沿着小于抗蚀剂膜的图案曝光的曝光装置的分辨率极限的图案曝光 ; 显影以形成在要形成遮光部分的部分和要形成半透射部分的部分之间的抗蚀剂膜残留率不同的抗蚀剂图案24a; 通过使用抗蚀剂图案24a作为掩模来蚀刻遮光膜23和半透膜22以形成透光部分; 仅去除残留在半透射部分上的抗蚀剂图案; 并且通过使用剩余的抗蚀剂图案作为掩模来蚀刻遮光膜23a以形成半透射部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003173015A

公开(公告)日：2003-06-20

申请号：JP2002256531

申请日：2002-09-02

Applicant: HOYA CORP

Inventor： IMURA KAZUHISA

IPC: G02F1/13 ,  G03F1/54 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a gray tone mask which has prescribed gray tone patterns in at least portions and can satisfy the dimensional accuracy of the prescribed gray tone patterns. SOLUTION: The intra-surface distribution of the film thickness of the resist applied to a substrate in a manufacturing process for the gray tone mask is kept below ±1%. As a result, the gray tone mask having the prescribed gray tone patterns 30 shown in, for example, Figure 5 in at least portions can be so formed as to satisfy the dimensional accuracy of the prescribed gray tone patterns. COPYRIGHT: (C)2003,JPO