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公开(公告)号：KR20180008458A
公开(公告)日：2018-01-24
申请号：KR20177032345
申请日：2016-05-10
Applicant: HOYA CORP
Inventor： NOZAWA OSAMU , KAJIWARA TAKENORI , OHKUBO RYO
IPC: G03F1/26 , G03F1/48 , G03F1/80 , H01L21/3065
Abstract: 본발명은, 패턴형성용박막에패턴을형성할때에행해지는불소계가스에의한드라이에칭에대한내성이투광성기판에비해높고, 약액(藥液) 세정에대한내성도높으며, 노광광에대한투과율도높다는 3가지의특성을동시에만족시키는에칭스토퍼막을구비하는마스크블랭크를제공한다. 또, 투광성기판의주표면상에패턴형성용박막을구비한마스크블랭크로서, 패턴형성용박막은, 규소를함유하고, 투광성기판과패턴형성용박막의사이에에칭스토퍼막을가지며, 에칭스토퍼막은, 규소, 알루미늄및 산소를함유하는것을특징으로한다.
Abstract translation: 本发明的特征在于，当在用于图案形成的薄膜上形成图案时由氟基气体进行的干法蚀刻的耐受性高于透明基板的耐受性，抗化学溶液的清洁性高且对曝光光的透射率也高 并且同时满足掩模板的全部三个特性的蚀刻阻挡膜。 在透明基板的主面上具有图案形成用薄膜的掩模基板中，图案形成用薄膜含有硅，在透明基板与图案形成用薄膜之间设置有蚀刻停止膜， 硅，铝和氧气。
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公开(公告)号：KR20180030471A
公开(公告)日：2018-03-23
申请号：KR20177035245
申请日：2016-08-02
Applicant: HOYA CORP
Inventor： NOZAWA OSAMU , SHISHIDO HIROAKI , KAJIWARA TAKENORI
Abstract: ArF 노광광에대하여소정의투과율로투과하는기능과그 투과하는 ArF 노광광에대하여소정의위상차를발생시키는기능을겸비하고, ArF 내광성이높은위상시프트막을구비하는마스크블랭크를제공한다. 위상시프트막은, ArF 노광광을 2% 이상의투과율로투과시키는기능과, 그투과하는 ArF 노광광에대하여 150도이상 180도이하의위상차를발생시키는기능을가지고, 기판측으로부터하층과상층이적층되고, 하층은, 규소, 또는규소에산소이외의비금속원소및 반금속원소에서선택되는 1 이상의원소를함유해서형성되고, 표층이외의상층은, 규소및 질소, 또는이들에산소를제외한비금속원소및 반금속원소에서선택되는 1 이상의원소를함유하는재료로형성되고, 하층은, 굴절률(n)이 1.8 미만이고또한소쇠계수(k)가 2.0 이상이고, 상층은, 굴절률(n)이 2.3 이상이고또한소쇠계수(k)가 1.0 이하이며, 상층은하층보다도두껍다.
Abstract translation: 本发明提供一种掩模基板，其具备以规定的透射率透过ArF曝光光，并对所透射的ArF曝光光产生规定的相位差，同时具有高的ArF耐光性的相移膜。 相移膜以2％或更高的透射率透射ArF曝光光线，并为所透射的ArF曝光光线产生150度和180度之间的相位差。 下层和上层从基材开始层压。 下层由硅或硅和含有一种或多种选自非金属元素（不包括氧和准金属元素）的元素的材料形成。 除了表面层以外的上层由硅和氮或硅，氮和包含选自非氧化物和类金属元素的非金属元素中的一种或多种元素的材料形成。 下层具有小于1.8的折射率n和不小于2.0的消光系数k。 上层具有不小于2.3的折射率n和不大于1.0的消光系数k。 上层比下层厚。
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公开(公告)号：SG11201800548TA
公开(公告)日：2018-02-27
申请号：SG11201800548T
申请日：2016-08-02
Applicant: HOYA CORP
Inventor： NOZAWA OSAMU , SHISHIDO HIROAKI , KAJIWARA TAKENORI
Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.
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公开(公告)号：SG11201900415RA
公开(公告)日：2019-02-27
申请号：SG11201900415R
申请日：2017-06-22
Applicant: HOYA CORP
Inventor： KAJIWARA TAKENORI , OHKUBO RYO , SHISHIDO HIROAKI , NOZAWA OSAMU
IPC: G03F1/32 , G03F1/58 , G03F1/74 , H01L21/3065
Abstract: DOCUMENT] Abs tract Provided is a mask blank having sufficiently fast repair rate of EB defect repair, and sufficiently high repair rate ratio to EB defect repair relative to a transparent substrate, even if the phase shift film is formed as a stacked structure of a high transmitting layer made of a SiN-based material with a large amount of nitrogen content and a low transmitting layer made of a SiN-based material with a small amount of nitrogen content. The mask blank includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes atom% or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom% nitrogen content and has a thickness less than the high transmitting layer. 61
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公开(公告)号：SG10201806936XA
公开(公告)日：2018-09-27
申请号：SG10201806936X
申请日：2016-08-02
Applicant: HOYA CORP
Inventor： NOZAWA OSAMU , SHISHIDO HIROAKI , KAJIWARA TAKENORI
Abstract: DOCUMENT] [TITLE OF INVENTION] MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer. FIG. 1
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Patent Agency Ranking
公开(公告)号：SG10201911778SA
公开(公告)日：2020-01-30
申请号：SG10201911778S
申请日：2016-08-02
Applicant: HOYA CORP
Inventor： NOZAWA OSAMU , SHISHIDO HIROAKI , KAJIWARA TAKENORI
Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.
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7.发明专利
公开(公告)号：JP2010086583A
公开(公告)日：2010-04-15
申请号：JP2008253043
申请日：2008-09-30
Applicant: Hoya Corp , Hoya Magnetics Singapore Pte Ltd , Hoya株式会社 , ホーヤ マグネティクス シンガポール プライベートリミテッド
Inventor： KAJIWARA TAKENORI , ONOE TAKAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a perpendicular magnetic recording medium capable of securing a high SNR while enhancing reliability by increasing strength of a coated film of a granular layer, and to provide a method for manufacturing the same.
SOLUTION: In the perpendicular magnetic recording medium 100 including at least a granular layer having a granular structure which is made of a Co-based alloy and where crystal grains are grown in a columnar shape on a disk base body 110, the granular layer (a non-magnetic granular layer 120, a first magnetic recording layer 122a, a second magnetic recording layer 122b) is film-deposited on the disk base body 110 by changing film-deposition speed from a low speed to a high speed or from the high speed to the low speed.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种能够通过提高颗粒层的涂膜的强度而提高可靠性的通过确保高信噪比的垂直磁记录介质，并提供其制造方法。 解决方案：在至少包括具有由Co基合金制成的颗粒状结构的颗粒层并且在圆盘基体110上以柱状生长晶粒的垂直磁记录介质100中，颗粒状 通过将薄膜沉积速度从低速改变到高速或从低速到高速的方式，将层（非磁性粒状层120，第一磁记录层122a，第二磁记录层122b）膜沉积在盘基体110上 高速到低速。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2009157956A
公开(公告)日：2009-07-16
申请号：JP2007331432
申请日：2007-12-25
Inventor： KAJIWARA TAKENORI
Abstract: PROBLEM TO BE SOLVED: To property reduce the size of magnetic crystal particles of a magnetic recording layer.
SOLUTION: A method of manufacturing a perpendicular magnetic recording medium 100 for recording information by a perpendicular magnetic recording system includes: an under layer deposition step of depositing an under layer 118 controlling the crystal orientation of an upper layer; and a magnetic recording layer deposition step of depositing a main recording layer 120 as a magnetic recording layer with a granular structure in which magnetic crystal particles 306 with the magnetization easy axes oriented to a direction according to the crystal orientation of the under layer 118 are dispersed in a matrix of a nonmagnetic material 308. In the under layer deposition step, at least the uppermost layer part of the under layer 118 is deposited by a sputtering method using as a sputtering gas a gas mixture of a noble gas and a polyatomic molecular gas.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：为了降低磁记录层的磁性结晶粒子的尺寸。 解决方案：制造用于通过垂直磁记录系统记录信息的垂直磁记录介质100的方法包括：下层沉积步骤，沉积控制上层晶体取向的下层118; 以及磁记录层沉积步骤，其沉积作为具有颗粒结构的磁记录层的主记录层120，其中易磁化轴的磁性晶粒306取向于根据底层118的晶体取向的方向分散 在非磁性材料308的矩阵中。在底层沉积步骤中，至少底层118的最上层部分通过溅射法沉积，使用惰性气体和多原子分子气体的气体混合物作为溅射气体 。 版权所有（C）2009，JPO＆INPIT
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9.发明专利
公开(公告)号：JP2010086584A
公开(公告)日：2010-04-15
申请号：JP2008253044
申请日：2008-09-30
Applicant: Hoya Corp , Hoya Magnetics Singapore Pte Ltd , Hoya株式会社 , ホーヤ マグネティクス シンガポール プライベートリミテッド
Inventor： KAJIWARA TAKENORI , ONOE TAKAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a perpendicular magnetic recording medium capable of securing a high SNR while enhancing reliability by increasing strength of a coated film of an underlayer layer, and to provide a method for manufacturing the same.
SOLUTION: In the perpendicular magnetic recording medium 100 including at least the underlayer 118 made of ruthenium and a granular layer (a non-magnetic granular layer 120, a magnetic recording layer 122) having a granular structure which is made of a Co-based alloy and where crystal grains are grown in a columnar shape on a disk base body 110, the underlayer is film-deposited on the disk base body by changing film-deposition speed from a low speed to a high speed or from the high speed to the low speed.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种能够通过提高下层的涂膜的强度而提高可靠性的高SNR的垂直磁记录介质，并提供其制造方法。 解决方案：在至少包括由钌制成的底层118和具有由Co制成的颗粒结构的颗粒层（非磁性颗粒层120，磁记录层122）的垂直磁记录介质100中 的合金，并且其中晶粒在圆盘基体110上以柱状生长，底层通过将成膜速度从低速改变为高速或从高速将膜沉积在盘基体上 到低速。 版权所有（C）2010，JPO＆INPIT
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10.发明专利
公开(公告)号：JP2010086565A
公开(公告)日：2010-04-15
申请号：JP2008251506
申请日：2008-09-29
Applicant: Hoya Corp , Hoya Magnetics Singapore Pte Ltd , Hoya株式会社 , ホーヤ マグネティクス シンガポール プライベートリミテッド
Inventor： KAJIWARA TAKENORI , ONOE TAKAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a perpendicular magnetic recording medium capable of enhancing OW characteristics while maintaining coercive force Hc and an SNR and achieving high recording density, and to provide a method of manufacturing the same.
SOLUTION: The perpendicular magnetic recording medium sequentially includes at least: a front underlayer 116 containing Ni, W and Pd on a disk base body 110; an underlayer 118 film-deposited on the front underlayer 116 and containing Ru; and a non-magnetic granular layer 120 film-deposited on the underlayer 118 and having a granular structure which is made of a Co-based alloy and whose crystal grains grow in a columnar shape.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供能够提高OW特性同时保持矫顽力Hc和SNR并实现高记录密度的垂直磁记录介质，并提供其制造方法。 解决方案：垂直磁记录介质至少依次包括：在盘基体110上包含Ni，W和Pd的前底层116; 薄膜沉积在前底层116上并含有Ru的底层118; 以及薄膜沉积在下层118上并具有由Co基合金制成并且其晶粒呈柱状形状的粒状结构的非磁性粒状层120。 版权所有（C）2010，JPO＆INPIT
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