公开(公告)号：GB2393851B

公开(公告)日：2005-07-13

申请号：GB0316906

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK JR WILLIAM M

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：DE10295878T5

公开(公告)日：2004-07-22

申请号：DE10295878

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JUN

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：WO02059967A3

公开(公告)日：2003-02-20

申请号：PCT/US0200121

申请日：2002-01-03

Applicant: HRL LAB LLC ,  CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

IPC: H01L23/522 ,  H01L23/58 ,  H01L27/02

CPC classification number: H01L23/573 ,  H01L23/5226 ,  H01L27/0203 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

Abstract: A device adapted to protect integrated circuits from reverse engineering comprising a part looking like a via connecting two metal layers, but in fact attached only to one metal layer and spaced from the other. Having such "trick" via would force a reverse engineer to think there is a connection where there is none. A method for fabricating such device.

Abstract translation: 一种适用于保护集成电路免受反向工程的设备，包括看起来像连接两个金属层的通孔的部分，但实际上仅附接到一个金属层并与另一个间隔开。 通过这样的“诡计”将迫使反向工程师认为没有连接。 一种制造这种装置的方法。

公开(公告)号：WO02059968B1

公开(公告)日：2003-05-22

申请号：PCT/US0200123

申请日：2002-01-03

Applicant: HRL LAB LLC ,  CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

CPC classification number: H01L23/573 ,  H01L27/0203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprisingmetal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of thecircuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricatingsuch devices.

Abstract translation: 半导体器件，包括集成电路，防止逆向工程，包括导致场氧化物的金属轨迹。 金属化通常导致电路的栅极，源极或漏极区域，而不是绝缘场氧化物，从而误导逆向工程师。 一种用于制造这种装置的方法。

公开(公告)号：WO02059968A3

公开(公告)日：2002-11-14

申请号：PCT/US0200123

申请日：2002-01-03

Applicant: HRL LAB LLC ,  CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK WILLIAM M JR

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

CPC classification number: H01L23/573 ,  H01L27/0203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprisingmetal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of thecircuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricatingsuch devices.

Abstract translation: 半导体器件，包括集成电路，防止逆向工程，包括导致场氧化物的金属轨迹。 金属化通常导致电路的栅极，源极或漏极区域，而不是绝缘场氧化物，从而误导逆向工程师。 一种用于制造这种装置的方法。

公开(公告)号：GB2393851A

公开(公告)日：2004-04-07

申请号：GB0316906

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  BAUKAS JAMES P ,  CLARK JR WILLIAM M

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：AU2002309501A1

公开(公告)日：2002-11-18

申请号：AU2002309501

申请日：2002-03-12

Applicant: HRL LAB LLC

Inventor： CHOW LAP-WAI ,  CLARK JR WILLIAM M ,  BAUKAS JAMES P

IPC: G11C17/18 ,  G06F12/14 ,  G11C7/12 ,  G11C7/18 ,  G11C7/24 ,  G11C16/02 ,  G11C16/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/02 ,  H01L27/10 ,  H01L27/112 ,  H01L27/115 ,  H01L23/58 ,  G11C11/4078

Abstract: A method and circuit for blocking unauthorized access to at least one memory cell in a semiconductor memory. The method includes providing a switch and/or a link which assumes an open state when access to the at least one memory cell is to be blocked; and coupling-a data line associated with the at least one memory cell to a constant voltage source in response to the switch or link assuming an open state.

公开(公告)号：AU2002234203A1

公开(公告)日：2002-08-06

申请号：AU2002234203

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： BAUKAS JAMES P ,  CLARK WILLIAM M JR ,  CHOW LAP-WAI

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8238 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/10 ,  H01L29/76

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

公开(公告)号：AU2002234201A1

公开(公告)日：2002-08-06

申请号：AU2002234201

申请日：2002-01-03

Applicant: HRL LAB LLC

Inventor： BAUKAS JAMES P ,  CHOW LAP-WAI ,  CLARK WILLIAM M JR

IPC: H01L23/522 ,  H01L23/58 ,  H01L27/02

Abstract: A device adapted to protect integrated circuits from reverse engineering comprising a part looking like a via connecting two metal layers, but in fact attached only to one metal layer and spaced from the other. Having such "trick" via would force a reverse engineer to think there is a connection where there is none. A method for fabricating such device.