THIN FILM LITHIUM-CONTAINING PHOTONICS WAFER HAVING A TRAP-RICH SUBSTRATE

    公开(公告)号:US20250155739A1

    公开(公告)日:2025-05-15

    申请号:US18942189

    申请日:2024-11-08

    Abstract: A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

    DOUBLE BLADE DICING OF LITHIUM-CONTAINING PHOTONICS DEVICES

    公开(公告)号:US20250076578A1

    公开(公告)日:2025-03-06

    申请号:US18817075

    申请日:2024-08-27

    Abstract: A singulated thin film lithium containing (TFLC) photonics device, as well as a method and system for singulating the device are described. The TFLC photonics device includes a device layer and a silicon substrate. The device layer includes a TFLC layer having a depth. The device layer also has a first sawn edge. The silicon substrate has a second sawn edge and includes an upper portion and a lower portion. The upper portion has the second sawn edge that is mutually aligned with the first sawn edge. The upper portion overhangs the lower portion.

    SINGULATION OF LITHIUM-CONTAINING PHOTONIC DEVICES

    公开(公告)号:US20230305326A1

    公开(公告)日:2023-09-28

    申请号:US18125644

    申请日:2023-03-23

    CPC classification number: G02F1/035 G02F2202/20

    Abstract: An optical device includes a substrate, an oxide layer on the substrate and an electro-optic device on the oxide layer. The oxide layer is at least one micrometer thick. The electro-optic device includes an electro-optic material having a thickness of not more than one micrometer. The silicon substrate, oxide layer, and the electro-optic material terminate at an edge. At least one of the silicon substrate has a thickness of at least five hundred micrometers or the edge includes a recessed region corresponding to a portion of the oxide layer.

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