公开(公告)号：JPH09330893A

公开(公告)日：1997-12-22

申请号：JP5916397

申请日：1997-03-13

Applicant: IBM

Inventor： REPIN RI ,  SUTEIIBUN JII BAABII ,  AANORUDO HARUPERIN

IPC: H01L21/304 ,  B24B37/04 ,  B24B49/02 ,  G01B7/06 ,  G01N27/00 ,  G01R27/00

Abstract: PROBLEM TO BE SOLVED: To hold abrasive history of all wafers and give detection sensitivity by a method wherein a sensor for generating a signal answering a film removal process is coupled to a positive feedback amplifier having a mode selector and this positive feedback amplifier is coupled to an analyzer. SOLUTION: A sensor 100 is coupled to a film to be grounded and generates a signal, and variations of the signal are propotional to variations of a thickness of a film when removed under the sensor. Accordingly, when a thickness of the film is decreased, a signal further varies. The signal from the sensor 100 is supplied to a positive feedback amplifier 104 by connecting means 102. The positive feedback amplifier 104 can increase a signal (frequency mode), and automatically set a gain (automatic amplitude mode), and supplies the signal to a filter 106, and removes high-dimensional higher harmonics if necessary. Next, the filtered signal is supplied to an analyzer 108, which monitors the signal and transmits data to a computer.

公开(公告)号：JPH08285514A

公开(公告)日：1996-11-01

申请号：JP8785896

申请日：1996-04-10

Applicant: IBM

Inventor： RIIPIN RII ,  SUCHIIBUN JIYOOJI BAABII ,  AANORUDO HARUPERIN ,  TONII FUREDERITSUKU HAINTSU

IPC: G01B7/00 ,  G01B7/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for monitoring a film thickness change on a ground body on the spot. SOLUTION: The thickness change of a film 100 on a ground body 102 such as a semiconductor substrate is monitored on the spot by inducing current in the film 100 and current change is detected when the thickness of the film 100 changes. In the case of a conductive film, an alternate electromagnetic field is generated by a sensor 110 including a capacitor 118 and an inductor 114 and an eddy current is induced in the film 100.

公开(公告)号：JPH08285515A

公开(公告)日：1996-11-01

申请号：JP8621696

申请日：1996-04-09

Applicant: IBM

Inventor： REEPIN RII ,  SUTEIIBUN JIYOOJI BAABII ,  AANORUDO HARUPERIN ,  TONII FUREDERITSUKU HAINTSU

IPC: G01B7/00 ,  G01B7/06 ,  G01R31/26 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To monitor the change in film thickness on the spot by inducing an eddy current in a film, monitoring current which changes as the thickness of the film changes, and eliminating a metal film from a semiconductor substrate. SOLUTION: A meted film 100 is formed on one surface of a wafer 102. A sensor 110 which has a circuit consisting of a capacitor 118 and a coil 114 wound around a ferrite toroid 112 is wound around the rear surface of the wafer 102. When the sensor 110 is excited by the sweeping output of a spectrum analyzer 130 via a resistor 120, a vibration current flows through the coil 114 and an eddy current is induced in the film 100 due to an alternate electromagnetic field. A sensor spectrum detected by the analyzer 130 has a resonance peak at a specific frequency related to a tank circuit and the film 100 being monitored. Then, the change in the film thickness can be monitored according to the change in peak amplitude, width, and resonance frequency due to the elimination of the film 100.

公开(公告)号：JPH0682509A

公开(公告)日：1994-03-22

申请号：JP9493

申请日：1993-01-04

Applicant: IBM

Inventor： SHINUU CHIYAN ,  HANTEINTON UTSUDOMAN KAATEISU ,  AASAA YUUJIN FUOORUZU ,  AANORUDO HARUPERIN ,  JIYON PIITAA KARIDEISU ,  JIYON DAKOSUTA MATSUKEI ,  DANII CHIYAN YON UON ,  KA CHIU UU ,  RI CHIEN TSUAI

IPC: G01R31/02 ,  G01R31/28

Abstract: PURPOSE: To perform the test and obstruction separation of a high density receiving circuit board (e.g.; non-mounted circuit board) and a substrate. CONSTITUTION: A small number of movable probes (151, 152) are used to simultaneously perform the measurement of network resistors (R1, R12) and network capacities (c1, c2, c12). Therefore, electrical changeover, excessive probe movement and both of them become unnecessary during a test and a test time is minimized. The simultaneous measurement of network capacities and network leakage is realized by using phase sensibility detection. The capacity value and resistance value of the leak route between a network to be measured and an unknown network can be measured by double frequency measuring technique. The leak resistance between the network during a test and the earth surface or power surface in a circuit board can be also determined from the above mentioned measurement.

公开(公告)号：JPS58191973A

公开(公告)日：1983-11-09

申请号：JP4460683

申请日：1983-03-18

Applicant: Ibm

Inventor： TOOMASU HAAMAN DEI SUTEFUANO ,  AANORUDO HARUPERIN

IPC: G01R31/02 ,  G01N27/20 ,  G01R31/28

CPC classification number: G01N27/20 ,  G01R31/281 ,  Y10T29/49004