公开(公告)号：EP1949382A4

公开(公告)日：2009-05-06

申请号：EP06752313

申请日：2006-05-04

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/15 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.

公开(公告)号：JP2011091429A

公开(公告)日：2011-05-06

申请号：JP2010284599

申请日：2010-12-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID W ,  TROUILLOUD PHILIP L

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide a MTJ device which can be manufactured leaving freedom to finely tune coercive force and to obtain an appreciable MR, and to provide a memory array including the same. SOLUTION: The magnetic tunnel junction device 200 is provided that includes a free layer 205 and a pinned layer 260 separated by a barrier layer. According to the invention, the free layer 205 includes a ferrimagnetic layer 210 and an anti-parallel layer 220. A magnetic moment of the anti-parallel layer 220 is substantially anti-parallel to a magnetic moment of the ferrimagnetic layer 210 at least within a prescribed temperature range of the magnetic tunnel junction device 200. A memory array that includes such a magnetic tunnel junction 200 is also provided. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供可以制造的MTJ装置，保留微调矫顽力并获得可观MR的自由度，并提供包括该MTJ装置的存储器阵列。 解决方案：提供磁性隧道结装置200，其包括自由层205和被势垒层隔开的钉扎层260。 根据本发明，自由层205包括铁磁性层210和反平行层220.反平行层220的磁矩基本上与铁氧体层210的磁矩反平行至少在 也提供了磁隧道结装置200的规定温度范围。还提供了包括这种磁性隧道结200的存储器阵列。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO2012151007A3

公开(公告)日：2014-04-10

申请号：PCT/US2012029881

申请日：2012-03-21

Applicant: IBM ,  ABRAHAM DAVID W ,  MOJUMDER NILADRI N ,  WORLEDGE DANIEL C

Inventor： ABRAHAM DAVID W ,  MOJUMDER NILADRI N ,  WORLEDGE DANIEL C

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1675

Abstract: A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.

Abstract translation: 提供了双向写入的机制。 结构包括在隧道势垒顶部的参考层，隧道势垒下的自由层，自由层下的金属隔离物，金属间隔物下方的绝缘磁体，以及绝缘层下方的高电阻层。 高电阻层用作加热器，其中加热器加热绝缘磁体以产生自旋极化电子。 自由层的磁化由绝缘磁体产生的自旋极化电子不稳定。 当磁化不稳定时，施加电压以改变自由层的磁化。 电压的极性决定了自由层的磁化何时平行并与参考层的磁化反平行。

公开(公告)号：JP2006005342A

公开(公告)日：2006-01-05

申请号：JP2005162158

申请日：2005-06-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAIDIS MICHAEL C ,  TROUILLOUD PHILLIP L ,  KANAKASABAPATHY SIVANANDA K ,  ABRAHAM DAVID W

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L31/113 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/15 ,  G11C11/16 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of efficiently forming a magnetism liner profile, making write-in magnetic field concentrate in a free layer of MTJ.
SOLUTION: In an MRAM cell, write-in current is confined inside a low reluctance material. A U-shaped cross-section concentrating magnetic flux to storing elements is attained, in such a way that this material is processed by one among several methods, and that the magnetic flux is transmitted by making a material nearest to the storing elements invalid.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够有效地形成磁性衬垫轮廓的方法，使得写入磁场集中在MTJ的自由层中。

解决方案：在MRAM单元中，写入电流限制在低磁阻材料内。 获得了将U形截面集中到存储元件的磁通量，使得这种材料通过几种方法中的一种进行处理，并且通过使最靠近存储元件的材料无效地传输磁通量。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004072090A

公开(公告)日：2004-03-04

申请号：JP2003178747

申请日：2003-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID W ,  TROUILLOUD PHILIP L

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222

Abstract: PROBLEM TO BE SOLVED: To provide an MTJ device capable of fabrication while leaving freedom for making fine adjustments on coercive force and leaving freedom for realizing MR of a corresponding degree, and a memory array comprising the MTJ device.
SOLUTION: A magnetic tunnel junction device 200 is provided which comprises a free layer 205 separated by a barrier layer and a pinned layer 260. The free layer 205 comprises a ferry magnetic layer 210 and an antiparallel layer 220. The magnetizing moment of the antiparallel layer 220 is substantially antiparallel with the magnetizing moment of the ferry magnetic layer 210 at least within the predetermined temperatures of the magnetic tunnel junction device 200. The memory array comprising the magnetic tunnel junction device 200 is also provided.
COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2014163730A3

公开(公告)日：2015-11-05

申请号：PCT/US2014012239

申请日：2014-01-21

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  CORCOLES GONZALEZ ANTONIO D ,  ROZEN JAMES R

IPC: H01R9/05

CPC classification number: H01R43/00 ,  H01P1/045 ,  H01P1/202 ,  H01R13/7197 ,  H01R24/40 ,  H01R24/42 ,  H01R43/16 ,  Y10T29/49204 ,  Y10T29/4921

Abstract: A microwave connector for efficient thermalization and filtering of microwave lines at millikelvin temperatures is provided. The microwave connector includes an outer conductor, an inner conductor disposed within the outer conductor and dielectric materials interposed between the outer conductor and the inner conductor, the dielectric materials including a non-dissipative dielectric material and a dissipative dielectric material.

Abstract translation: 提供了一种微波连接器，用于以毫微米温度有效地对微波线进行热化和过滤。 微波连接器包括外部导体，设置在外部导体内部的内部导体和介于外部导体和内部导体之间的介电材料，介电材料包括非耗散介电材料和耗散介电材料。

公开(公告)号：WO2007055727A3

公开(公告)日：2008-11-06

申请号：PCT/US2006017419

申请日：2006-05-04

Applicant: IBM ,  ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

Inventor： ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.

Abstract translation: 提供了一种用于优化具有多组分自由层的磁性隧道结（MTJ）的触发窗口的装置和方法。 根据本发明的一个方面，MTJ包括自由层，被钉扎层和形成在自由层和钉扎层之间的阻挡层。 自由层又包括多个自由磁性子层，而被钉扎层包括多个固定的磁性子层。 每个被钉扎的磁性子层在自由磁性子层上施加磁场。 为了优化装置的切换窗口，选择每个被钉扎的磁性子层的尺寸以基本均衡作用在每个自由磁性子层上的平均磁场。

公开(公告)号：GB2528199A

公开(公告)日：2016-01-13

申请号：GB201517606

申请日：2014-01-21

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  GONZALEZ ANTONIO D CORCOLES ,  ROZEN JAMES R

IPC: H01P1/202 ,  H01P1/04 ,  H01R13/7197 ,  H01R24/42 ,  H01R43/00

Abstract: A microwave connector for efficient thermalization and filtering of microwave lines at millikelvin temperatures is provided. The microwave connector includes an outer conductor, an inner conductor disposed within the outer conductor and dielectric materials interposed between the outer conductor and the inner conductor, the dielectric materials including a non-dissipative dielectric material and a dissipative dielectric material.

公开(公告)号：DE112012001965T5

公开(公告)日：2014-02-06

申请号：DE112012001965

申请日：2012-04-03

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  MOJUMDER NILADRI N

IPC: H01L29/82

Abstract: Es wird eine Vorrichtung für ein bidirektionales Schreiben bereitgestellt. Ein Stapel beinhaltet eine Referenzschicht auf einer Tunnelbarriere, die Tunnelbarriere auf einer freien Schicht und die freie Schicht auf einem Abstandshalter aus Metall. Die Vorrichtung beinhaltet einen isolierenden Magneten. Ein Peltier-Material ist mit dem isolierenden Magneten und dem Stapel thermisch gekoppelt. Wenn die Grenzfläche zwischen Peltier und isolierendem Magneten abgekühlt wird, ist der isolierende Magnet so konfiguriert, dass er ein Spin-Drehmoment überträgt, um eine Magnetisierung der freien Schicht in eine erste Richtung zu drehen. Wenn die Grenzfläche zwischen Peltier und dem isolierenden Magneten erwärmt wird, ist der isolierende Magnet so konfiguriert, dass er das Spin-Drehmoment überträgt, um die Magnetisierung der freien Schicht in eine zweite Richtung zu drehen.

公开(公告)号：DE112012001962B4

公开(公告)日：2015-05-21

申请号：DE112012001962

申请日：2012-03-21

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  MOJUMDER NILADRI N ,  WORLEDGE DANIEL C

IPC: G11C11/14 ,  G11C11/16

Abstract: Verfahren für ein bidirektionales Beschreiben einer magnetischen Speichereinheit mit wahlfreiem Zugriff (MRAM-Einheit), die eine Referenzschicht, eine Tunnelbarriere angrenzend an die Referenzschicht, eine freie Schicht angrenzend an die Tunnelbarriere, einen Metallabstandshalter angrenzend an die freie Schicht, einen isolierenden Magneten angrenzend an den Metallabstandshalter und eine Metallerwärmungsvorrichtung angrenzend an den isolierenden Magneten aufweist, wobei das Verfahren aufweist: Bewirken, dass der isolierende Magnet in Reaktion auf einen thermischen Gradienten spin-polarisierte Elektronen erzeugt; Initiieren einer Destabilisierung einer Magnetisierung der freien Schicht durch die von dem isolierenden Magneten erzeugten spin-polarisierten Elektronen; und Anlegen einer Spannung an die MRAM-Einheit nach dem Initiieren der Destabilisierung, um die Magnetisierung der freien Schicht zu wählen; wobei eine Polarität der Spannung bestimmt, ob die Magnetisierung der freien Schicht parallel oder antiparallel zu einer Magnetisierung der Referenzschicht ist.