公开(公告)号：EP1949382A4

公开(公告)日：2009-05-06

申请号：EP06752313

申请日：2006-05-04

Applicant: IBM

Inventor： ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/15 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.

公开(公告)号：JP2007335861A

公开(公告)日：2007-12-27

申请号：JP2007151000

申请日：2007-06-06

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID WILLIAM ,  PARKIN STUART STEPHEN ,  WORLEDGE DANIEL CHRISTOPHER ,  BROWN STEPHEN L

IPC: H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11C11/16

Abstract: PROBLEM TO BE SOLVED: To provide a toggle type magnetic tunnel junction configured to be capable of precisely controlling the magnetic anisotropy axis of a ferromagnetic layer. SOLUTION: A semiconductor device formed between a word line and bit line has a growth layer, antiferromagnetic layer formed on the growth layer, a pin layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pin layer, and a free layer formed on the tunnel barrier layer. The word line and bit line are arranged so that the two lines may become almost orthogonal to each other. Meanwhile, the growth layer has tantulum with thickness of more than about 75 Å. Furthermore, the pin layer has one or more pin ferromagnetic sublayers. The tunnel barrier layer has magnesium oxide. Lastly, the free layer has two or more free ferromagnetic sublayers having a magnetic anisotropy axis oriented to about 45 degrees from the word line and bit line, respectively. The semiconductor device can have a magnetic tunnel junction to be used in an MRAM circuit for example. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种构造成能够精确地控制铁磁层的磁各向异性轴的肘节型磁隧道结。 形成在字线和位线之间的半导体器件具有生长层，形成在生长层上的反铁磁层，形成在反铁磁性层上的引脚层，形成在引脚层上的隧道势垒层，以及 形成在隧道势垒层上的自由层。 字线和位线被布置成使得两条线可能变得彼此几乎正交。 同时，生长层具有超过约75埃的厚度。 此外，引脚层具有一个或多个引脚铁磁性子层。 隧道势垒层具有氧化镁。 最后，自由层具有两个或多个自由铁磁子层，其具有分别与字线和位线定向成约45度的磁各向异性轴。 半导体器件可以具有例如在MRAM电路中使用的磁性隧道结。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2010278442A

公开(公告)日：2010-12-09

申请号：JP2010121255

申请日：2010-05-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： WORLEDGE DANIEL CHRISTOPHER

IPC: H01L43/08 ,  H01L21/8246 ,  H01L27/105

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/04 ,  H01L43/08 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To provide a structure, a device, and a memory which are adapted to change the direction of the magnetic moment of a free magnetic layer by using a writing current that is smaller than before, and a method for forming them.
SOLUTION: In the magnetoresistive structure, the device, and the memory, and the method for forming them, the magnetoresistive structure includes a first ferromagnetic layer, a first non-magnetic spacer layer adjoining to the first ferromagnetic layer, a second ferromagnetic layer adjoining to the first non-magnetic spacer layer, and a first antiferromagnetic layer adjoining to the second layer where the first ferromagnetic layer can include a first fixed ferromagnetic layer, the second ferromagnetic layer can include a free ferromagnetic layer, and the first antiferromagnetic layer can include a free antiferromagnetic layer.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适于通过使用比以前更小的写入电流来改变自由磁性层的磁矩的方向的结构，装置和存储器，以及用于 形成它们。 解决方案：在磁阻结构，器件和存储器及其形成方法中，磁阻结构包括第一铁磁层，与第一铁磁层邻接的第一非磁性间隔层，第二铁磁性层 与第一非磁性间隔层邻接的第一反铁磁层和与第二层相邻的第一反铁磁层，其中第一铁磁层可以包括第一固定铁磁层，第二铁磁层可以包括自由铁磁层，第一反铁磁层 可以包括自由反铁磁层。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO2012161753A3

公开(公告)日：2014-03-13

申请号：PCT/US2012022369

申请日：2012-01-24

Applicant: IBM ,  WORLEDGE DANIEL CHRISTOPHER ,  KORENIVSKI VLADISLAV

Inventor： WORLEDGE DANIEL CHRISTOPHER ,  KORENIVSKI VLADISLAV

IPC: H01L29/66

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

Abstract: Magnetic tunnel junction transistor devices and methods for operating and forming magnetic tunnel junction transistor devices. In one aspect, a magnetic tunnel junction transistor device includes a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode. The magnetic tunnel junction includes a magnetic free layer that longitudinally extends between, and is overlapped by, the first and second source/drain electrodes. The gate electrode completely overlaps the magnetic free layer between the first and second source/drain electrodes. The magnetic tunnel junction transistor device switches a magnetization orientation of the magnetic free layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the first and second source/drain electrodes through the magnetic free layer.

Abstract translation: 磁隧道结晶体管器件和用于操作和形成磁隧道结晶体管器件的方法。 在一个方面，磁性隧道结晶体管器件包括设置在栅极电极和第二源极/漏极之间的第一源极/漏极，第二源极/漏极，栅电极和磁性隧道结。 磁性隧道结包括在第一和第二源极/漏极之间纵向延伸并与其重叠的无磁性层。 栅极电极与第一和第二源极/漏极之间的磁性自由层完全重叠。 磁性隧道结晶体管器件通过向栅电极施加栅极电压来切换磁性自由层的磁化取向，从而通过无磁性层改变第一和第二源极/漏极之间的电阻。

公开(公告)号：WO2007055727A3

公开(公告)日：2008-11-06

申请号：PCT/US2006017419

申请日：2006-05-04

Applicant: IBM ,  ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

Inventor： ABRAHAM DAVID W ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: Apparatus and methods for optimizing a toggle window for a magnetic tunnel junction (MTJ) having a multicomponent free layer are provided. In accordance with an aspect of the invention, a MTJ comprises a free layer, a pinned layer, and a barrier layer formed between the free layer and the pinned layer. The free layer, in turn, includes a plurality of free magnetic sublayers while the pinned layer includes a plurality of pinned magnetic sublayers. Each of the pinned magnetic sublayers exerts a magnetic field on the free magnetic sublayers. To optimize the toggle window for the device, the dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields acting on each of the free magnetic sublayers.

Abstract translation: 提供了一种用于优化具有多组分自由层的磁性隧道结（MTJ）的触发窗口的装置和方法。 根据本发明的一个方面，MTJ包括自由层，被钉扎层和形成在自由层和钉扎层之间的阻挡层。 自由层又包括多个自由磁性子层，而被钉扎层包括多个固定的磁性子层。 每个被钉扎的磁性子层在自由磁性子层上施加磁场。 为了优化装置的切换窗口，选择每个被钉扎的磁性子层的尺寸以基本均衡作用在每个自由磁性子层上的平均磁场。

公开(公告)号：GB2528806A

公开(公告)日：2016-02-03

申请号：GB201517577

申请日：2014-11-05

Applicant: IBM

Inventor： ANNUNZIATA ANTHONY JOSEPH ,  TROUILLOUD PHILIP LOUIS ,  WORLEDGE DANIEL CHRISTOPHER ,  BANDIERA SEBASTIEN ,  LOMBARD LUCIEN ,  PREJBEANU LUCIAN

IPC: G11C11/16 ,  B82Y25/00 ,  G11C11/56 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08

Abstract: A thermally assisted magnetoresistive random access memory device (TAS-MRAM or Thermal MRAM). The device operates as a magnetic tunnel junction (MTJ) which comprises a tunnel barrier junction 14 sandwiched between a sense ferromagnetic layer 16 and a synthetic antiferromagnetic layer (SAF) 12 which acts as a storage layer. SAF layer comprises two proximate ferromagnetic layers 11, 13 separated by a non magnetic coupling layer 15 (ruthenium Ru). Adjacent to the SAF layer is a pinning layer 30 which fixes the magnetic orientation of the antiferromagnetic layers in normal operation but when electrically heated during the write cycle, unpins the magnetic orientations of the SAF ferromagnetic layers allowing programming of the TAS-MRAM MTJ device, by an adjacent magnetic filed 80. The ferromagnetic material may comprise Co, Fe, Ni or any alloys of these elements. At least one of the ferromagnetic layers in the ferromagnetic sense layer or in the constituents of the synthetic antiferromagnetic layer may comprise a non magnetic material acting as dopants, for example Ta, Ti, Hf, Cr, Nb, Mo or Zr or alloys of these elements. The doped ferromagnetic layers may be formed from sputtering, co-sputtering and may also form layers or a laminate (figures 8A-C). The ensuing reduction in the magnetostatic interaction dispersions between the relative ferromagnetic sense and storage layers leads to a reduction in reading or writing power consumption. It also allows a relatively larger thickness for each or any of the ferromagnetic layers, which may within the range 10Ã -60Ã .

公开(公告)号：GB2520429A

公开(公告)日：2015-05-20

申请号：GB201419724

申请日：2014-11-05

Applicant: IBM ,  CROCUS TECHNOLOGY SA

Inventor： ANNUNZIATA ANTHONY JOSEPH ,  TROUILLOUD PHILIP LOUIS ,  WORLEDGE DANIEL CHRISTOPHER ,  BANDIERA SEBASTIEN ,  LOMBARD LUCIEN ,  PREJBEANU LUCIAN

IPC: G11C11/16 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08

Abstract: A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12. The pinning layer 30 pins a magnetic moment of the storage layer until heating is applied. Either or both of the storage and sense ferromagnetic layers includes a non-magnetic material to reduce the magnetization of the respective layers. The reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power. The ferromagnetic materials in the sense and storage layers may include at least one of Co, Fe, Ni, and any alloy including Co, Fe, Ni, whilst the non-magnetic material includes at least one of Ta, Ti, Hf, Cr, Nb, Mo, Zr and any alloy containing Ta, Ti, Hf, Cr, Nb, Mo, Zr. The antiferromagnetic pinning layer may have a diameter less than 250nm based on the reduction in magnetization of at least one of the storage or sense layer. The ferromagnetic storage layer may be formed by sputtering ,chemical vapour (vapor) deposition CVD or physical vapour deposition PVD , and may involve co-sputtering the ferromagnetic and non magnetic material, or forming multi-layers of ferromagnetic and non magnetic material. The ferromagnetic sense layer may also be formed by co-sputtering of ferromagnetic and non magnetic material or forming multilayers of the two materials. An alternative embodiment (figures 7A/B) comprises a tunnel barrier layer 14 sandwiched between a ferromagnetic storage layer 16 and a synthetic antiferromagnetic storage layer 12, which includes a first ferromagnetic storage layer 11 adjacent to the tunnel barrier layer and a non magnetic coupling layer 15 sandwiched between the first ferromagnetic storage layer 11 and a second ferromagnetic storage layer 13. The alternative structure further allows for a relative increase in the thickness of the first ferromagnetic layer 11.

公开(公告)号：CA2757477A1

公开(公告)日：2010-12-29

申请号：CA2757477

申请日：2010-04-12

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  YU GUOHAN ,  SUN JONATHAN ZANHONG ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00

Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.

公开(公告)号：DE102005008353A1

公开(公告)日：2005-10-20

申请号：DE102005008353

申请日：2005-02-23

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： BROWN STEPHEN L ,  GUPTA ARUNAVA ,  KLOSTERMANN ULRICH ,  PARKIN STUART STEPHEN PAPWORTH ,  RABERG WOLFGANG ,  SAMANT MAHESH ,  TROUILLOUD PHILIP ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00 ,  G11C11/02 ,  G11C11/15 ,  H01L27/22

Abstract: Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

公开(公告)号：DE112012002231B4

公开(公告)日：2018-05-09

申请号：DE112012002231

申请日：2012-01-24

Applicant: IBM

Inventor： WORLEDGE DANIEL CHRISTOPHER ,  KORENIVSKI VLADISLAV

IPC: H03K17/74 ,  B82Y10/00 ,  B82Y99/00 ,  H01L29/68 ,  H01L29/772

Abstract: Transistoreinheit mit einem magnetischen Tunnelübergang, die aufweist:eine erste Source-/Drain-Elektrode;eine zweite Source-/Drain-Elektrode;eine Gate-Elektrode;einen magnetischen Tunnelübergang, der zwischen der Gate-Elektrode und der zweiten Source-/Drain-Elektrode angeordnet ist, wobei der magnetische Tunnelübergang eine magnetische freie Schicht aufweist, die sich der Länge nach zwischen der ersten und der zweiten Source-/Drain-Elektrode erstreckt und von diesen überlagert ist;wobei die Gate-Elektrode die magnetische freie Schicht zwischen der ersten und der zweiten Source-/Drain-Elektrode vollständig überlagert,dadurch gekennzeichnet, dassdie Transistoreinheit des Weiteren eine Gate-Dielektrikum-Schicht aufweist, die zwischen die Gate-Elektrode und die magnetische freie Schicht eingefügt ist.