公开(公告)号：EP2580782A4

公开(公告)日：2014-10-01

申请号：EP11810114

申请日：2011-06-29

Applicant: IBM

Inventor： ANDERSON FREDERICK G ,  LARY JENIFER E ,  RASSEL ROBERT M ,  STIDHAM MARK E

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47

CPC classification number: H01L29/872 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0692 ,  H01L29/66143

公开(公告)号：WO2012012157A3

公开(公告)日：2012-04-26

申请号：PCT/US2011042296

申请日：2011-06-29

Applicant: IBM ,  ANDERSON FREDERICK G ,  LARY JENIFER E ,  RASSEL ROBERT M ,  STIDHAM MARK E

Inventor： ANDERSON FREDERICK G ,  LARY JENIFER E ,  RASSEL ROBERT M ,  STIDHAM MARK E

IPC: H01L29/872 ,  H01L29/47

CPC classification number: H01L29/872 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0692 ,  H01L29/66143

Abstract: A Schottky barrier diode comprises a first-type substrate (100), a second-type well isolation region (102) on the first-type substrate, and a first-type well region (110) on the second-type well isolation region. With embodiments herein a feature referred to as a perimeter capacitance well junction ring (106) is on the second-type well isolation region. A second-type well region (104) is on the second-type well isolation region. The perimeter capacitance well junction ring is positioned between and separates the first-type well region and the second-type well region. A second-type contact region (108) is on the second-type well region, and a first-type contact region (112) contacts the inner portion of the first-type well region. The inner portion of the first-type well region is positioned within the center of the first-type contact region. Additionally, a first ohmic metallic layer (124) is on the first- type contact region and a second ohmic metallic layer (126) is on the first-type well region. The first ohmic metallic layer contacts the second ohmic metallic layer at a junction that makes up the Schottky barrier of the Schottky barrier diode.

Abstract translation: 肖特基势垒二极管包括第一类型衬底（100），在第一类型衬底上的第二类型阱隔离区域（102）以及在第二类型阱隔离区域上的第一类型阱区域（110）。 通过本文的实施例，被称为周边电容阱结环（106）的特征位于第二类型阱隔离区上。 第二类型阱区（104）位于第二类型阱隔离区上。 周边电容阱连接环位于第一类型阱区和第二类型阱区之间并将其隔开。 第二类型接触区域（108）位于第二类型阱区域上，并且第一类型接触区域（112）接触第一类型阱区域的内部部分。 第一类型阱区的内部位于第一类型接触区的中心内。 此外，第一欧姆金属层（124）位于第一型接触区上，而第二欧姆金属层（126）位于第一型阱区上。 第一欧姆金属层在构成肖特基势垒二极管的肖特基势垒的结处与第二欧姆金属层接触。