公开(公告)号：DE3585047D1

公开(公告)日：1992-02-13

申请号：DE3585047

申请日：1985-04-17

Applicant: IBM

Inventor： BADAMI DINESH ARVINDLAL ,  HAKEY MARK CHARLES ,  MORITZ HOLGER

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/30 ,  H01L21/00 ,  H01L21/308

Abstract: A optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fragile photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate (10). The photoresist is exposed through a photomask (30) to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas (24) between the exposed (22) and unexposed areas (26) formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100 DEG C for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas (24) react, freezing the solubility of the partially exposed areas (24) with respect to that of the unexposed areas (26). The photoresist is then blanket exposed and developed in a solvent, leaving the partially exposed areas (24) on the substrate. The resulting thin resist lines can be used to form narrow isolation trenches by coating the substrate with a quartz film and lifting off the resist lines.

公开(公告)号：DE3371837D1

公开(公告)日：1987-07-02

申请号：DE3371837

申请日：1983-10-11

Applicant: IBM

Inventor： BADAMI DINESH ARVINDLAL ,  BERGENDAHL ALBERT STEPHEN ,  HAKEY MARK CHARLES

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/31 ,  H01L21/762 ,  H01L29/06