公开(公告)号：DE3175488D1

公开(公告)日：1986-11-20

申请号：DE3175488

申请日：1981-02-07

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： MORITZ HOLGER

IPC: H01L21/3205 ,  H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/14 ,  H05K3/40 ,  H05K3/46 ,  H01L21/00 ,  H01L21/60 ,  H01L21/90

Abstract: On the layer 12 a mask 3 corresponding to the desired pattern of holes 15 is provided with via openings 14 having overhanging walls. The layer 12 is selectively etched with a method where the etching attack takes place vertically to the layer surface, and wherein the mask 3 is thinned simultaneously, so that holes 15 are obtained having a cross-section increasing toward the mask 3. If subsequently material 16 for filling the holes 15 is applied in a blanket deposition these holes are completely filled when the material 16 has the same thickness as the layer 12 although the openings over the holes are decreasing with increasing thickness of the material 16. The layer 12 consists preferably of an insulation material, the mask 3 of positive photoresist, and the material 16 of a metal.

公开(公告)号：DE3571161D1

公开(公告)日：1989-07-27

申请号：DE3571161

申请日：1985-03-22

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： MORITZ HOLGER ,  PFEIFFER GERD

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/08 ,  G03F7/023 ,  G03F7/039 ,  G03F7/20 ,  G03F7/40 ,  H01L21/306 ,  G03F7/08 ,  G03F7/26

Abstract: A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10 DEG C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150 DEG to 280 DEG C. The finished lift-off mask is dimensionally stable at temperatures of

公开(公告)号：DE2861541D1

公开(公告)日：1982-03-04

申请号：DE2861541

申请日：1978-06-20

Applicant: IBM

Inventor： MORITZ HOLGER

IPC: H05K3/06 ,  C23F1/02 ,  G01B11/00 ,  G01B11/14 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/306 ,  G03C5/24

Abstract: In practice, the development time for a photoresist covered semiconductor wafer exposed by a given mask configuration is established experimentally. It is obvious that this time is only adequate if the other parameters do not change. According to the subject invention the mask is provided with an optical grid. The grid pattern, together with the pattern of the integrated circuit, is transferred by exposure to the photoresist layer covering the semiconductor wafer. During the development process, a light ray is directed onto the area of the wafer which was exposed to the grid pattern and the intensity of the light diffracted in the direction of the 2nd diffraction order is monitored by a light sensor. The slits of the grid may have the same width as the smallest lines of the exposed pattern. In this case, the intensity minimum of the 2nd diffraction order indicates the end of the development process.

公开(公告)号：FR2316625A1

公开(公告)日：1977-01-28

申请号：FR7613472

申请日：1976-04-29

Applicant: IBM

Inventor： MORITZ HOLGER ,  PAAL GABOR

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/022 ,  G03F7/085 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  G03C1/68 ,  G03F1/00

Abstract: The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic radiation. The material which was not exposed originally is then removed with a solvent to give a negative image.

公开(公告)号：DE3585047D1

公开(公告)日：1992-02-13

申请号：DE3585047

申请日：1985-04-17

Applicant: IBM

Inventor： BADAMI DINESH ARVINDLAL ,  HAKEY MARK CHARLES ,  MORITZ HOLGER

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/30 ,  H01L21/00 ,  H01L21/308

Abstract: A optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fragile photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate (10). The photoresist is exposed through a photomask (30) to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas (24) between the exposed (22) and unexposed areas (26) formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100 DEG C for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas (24) react, freezing the solubility of the partially exposed areas (24) with respect to that of the unexposed areas (26). The photoresist is then blanket exposed and developed in a solvent, leaving the partially exposed areas (24) on the substrate. The resulting thin resist lines can be used to form narrow isolation trenches by coating the substrate with a quartz film and lifting off the resist lines.

公开(公告)号：DE3581941D1

公开(公告)日：1991-04-04

申请号：DE3581941

申请日：1985-12-21

Applicant: IBM DEUTSCHLAND

Inventor： MORITZ HOLGER ,  PIETSCH DIETER ,  WUESTENHAGEN JUERGEN DR ,  ZIEGLER JOHANNA

IPC: G03C5/08 ,  G03F1/00 ,  G03F7/20 ,  H01L21/30

公开(公告)号：DE2728361A1

公开(公告)日：1979-01-11

申请号：DE2728361

申请日：1977-06-23

Applicant: IBM DEUTSCHLAND

Inventor： MORITZ HOLGER

IPC: H05K3/06 ,  C23F1/02 ,  G01B11/00 ,  G01B11/14 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/306 ,  H01L21/31

Abstract: In practice, the development time for a photoresist covered semiconductor wafer exposed by a given mask configuration is established experimentally. It is obvious that this time is only adequate if the other parameters do not change. According to the subject invention the mask is provided with an optical grid. The grid pattern, together with the pattern of the integrated circuit, is transferred by exposure to the photoresist layer covering the semiconductor wafer. During the development process, a light ray is directed onto the area of the wafer which was exposed to the grid pattern and the intensity of the light diffracted in the direction of the 2nd diffraction order is monitored by a light sensor. The slits of the grid may have the same width as the smallest lines of the exposed pattern. In this case, the intensity minimum of the 2nd diffraction order indicates the end of the development process.

公开(公告)号：DE2855723A1

公开(公告)日：1980-07-10

申请号：DE2855723

申请日：1978-12-22

Applicant: IBM DEUTSCHLAND

Inventor： MORITZ HOLGER ,  SCHACKERT KLAUS DIPL PHYS

IPC: G03F7/022 ,  G03F7/10

Abstract: Crosslinking agent used in positive resist is an N-(N'-2-hydroxyethyl)-aminoethyl-amide cpd. (I) of formula R-CO-NH-CH2CH2-NH(CH2)2OH (in which R is alkyl). Positive resist is used to make negative of a mask by exposing a sealed layer of the resist contg. (I) through the mask; heating for a fixed time to a fixed temp., then giving a blanket exposure before final development. Process is specified for use in prodn. of lift-off masks, esp. for use in metallisation. It is relatively simple, and suitable for large scale operation. Good resolution is obtd. and the negative is very true to the original, with very small tolerances and very few flaws. (I), which is the hydrolysis prod. of 1-hydroxyethyl-2-alkylimidazoline (II), gives better results than (II) itself and also promotes adhesion of the resist to the substrate.

公开(公告)号：CA1075523A

公开(公告)日：1980-04-15

申请号：CA256223

申请日：1976-06-30

Applicant: IBM

Inventor： MORITZ HOLGER ,  PAAL GABOR

IPC: G03C5/00

Abstract: METHOD OF CONVERTING A POSITIVE PHOTORESIST LAYER TO A NEGATIVE PHOTORESIST IMAGE A normally positive acting photoresist material is made operable as a negative acting material by the additional steps following image-wise exposure, of heating the layer and subsequently blanket exposing it to light prior to developing it with an alkaline solvent.

公开(公告)号：DE2529054A1

公开(公告)日：1977-06-30

申请号：DE2529054

申请日：1975-06-30

Applicant: IBM DEUTSCHLAND

Inventor： MORITZ HOLGER ,  PAAL GABOR DIPL CHEM DR RER NA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/022 ,  G03F7/085 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  G03F7/10 ,  H05K3/06

Abstract: The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic radiation. The material which was not exposed originally is then removed with a solvent to give a negative image.