公开(公告)号：FR2334278A7

公开(公告)日：1977-07-01

申请号：FR7603920

申请日：1976-02-06

Applicant: IBM

Inventor： BAGLIN JOHN E ,  TU KING NING ,  DISTEFANO THOMAS H

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01B19/04 ,  H05K3/22

Abstract: 1519695 Densifying glass INTERNATIONAL BUSINESS MACHINES CORP 5 March 1976 [11 June 1975] 08844/76 Heading C1M [Also in Division H1] The dielectric breakdown strength of a vitreous insulating layer less than 105000 Š thick of an electronic device is increased by irradiating the layer, during or after its formation, with ions of H, He, Ne, Ar, Kr or Xe at a dosage and energy so as to increase the density of the layer by at least 1% without the ions penetrating completely the layer, and then annealing the layer. The vitreous layer may be fused SiO 2 on a substrate of, e.g., silicon. The device 30-1 comprising the vitreous layer may be mounted on plate 30-2 in mounts 30-3. Ions from source 12 are passed through accelerator 14, then through a momentum analyzing magnet 16 and beam scanner plates 18-1, 18-2, 20-1, 20-2, and directed on to the vitreous layer (e.g. at a dosage of 10 13 -10 17 ions/cm 2 .). The annealing, which may be concurrent with the irradiation may be at 200-800‹ C.

公开(公告)号：CA1038504A

公开(公告)日：1978-09-12

申请号：CA247395

申请日：1976-03-05

Applicant: IBM

Inventor： BAGLIN JOHN E ,  DISTEFANO THOMAS H ,  TU KING-NING

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01L21/72

Abstract: METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A DEVICE INCLUDING ION IMPLATATION THEREIN It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO2 thin film, with a subsequent annealing procedure, improves the dielectric breakdown property of the film. The treated SiO2 film is found to be substantially more dense than a comparable untreated SiO2 film. It is theorized for the practice of this disclosure that the physical mechanism which produces the densification of the SiO2 film may be responsible for the enhanced dielectric properties of the film. Such an improved film is especially useful as the gate insulator layer in an insulated-gate electrode field-effect transistor device, and as an insulating layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field effect devices in which the gate insulation is relatively thin, e.g. less than 500.ANG., and in metallic magnetic-bubble devices in which a thin SiO2 layer is used to separate the sense element from the conductive magnetic film.