公开(公告)号：FR2334278A7

公开(公告)日：1977-07-01

申请号：FR7603920

申请日：1976-02-06

Applicant: IBM

Inventor： BAGLIN JOHN E ,  TU KING NING ,  DISTEFANO THOMAS H

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01B19/04 ,  H05K3/22

Abstract: 1519695 Densifying glass INTERNATIONAL BUSINESS MACHINES CORP 5 March 1976 [11 June 1975] 08844/76 Heading C1M [Also in Division H1] The dielectric breakdown strength of a vitreous insulating layer less than 105000 Š thick of an electronic device is increased by irradiating the layer, during or after its formation, with ions of H, He, Ne, Ar, Kr or Xe at a dosage and energy so as to increase the density of the layer by at least 1% without the ions penetrating completely the layer, and then annealing the layer. The vitreous layer may be fused SiO 2 on a substrate of, e.g., silicon. The device 30-1 comprising the vitreous layer may be mounted on plate 30-2 in mounts 30-3. Ions from source 12 are passed through accelerator 14, then through a momentum analyzing magnet 16 and beam scanner plates 18-1, 18-2, 20-1, 20-2, and directed on to the vitreous layer (e.g. at a dosage of 10 13 -10 17 ions/cm 2 .). The annealing, which may be concurrent with the irradiation may be at 200-800‹ C.

公开(公告)号：DE3273164D1

公开(公告)日：1986-10-16

申请号：DE3273164

申请日：1982-06-22

Applicant: IBM

Inventor： TU KING NING ,  AHN KIE YEUNG ,  HERD SIGRID RENEE ,  LEE MICHAEL HEINO ,  WIEDER HAROLD ,  ONTON AARE

IPC: G11C17/00 ,  B41M5/26 ,  G11B7/243 ,  G11C13/04 ,  B41M5/24 ,  G03C1/72 ,  G11B7/00

公开(公告)号：DE2613498A1

公开(公告)日：1976-10-28

申请号：DE2613498

申请日：1976-03-30

Applicant: IBM

Inventor： AHN MIE YEUNG ,  BAJOREK CHRISTOPHER HENRY ,  ROSENBERG ROBERT ,  TU KING NING

IPC: G11B5/66 ,  C01G49/02 ,  C23C14/08 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  H01F10/18 ,  H01F10/20 ,  H01F41/14 ,  H01F41/18 ,  H01F41/28 ,  B01J17/30

Abstract: A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of polycrystals. A ferrite such as magnetite (Fe3O4) is sputtered from a target onto the first thin film forming a mixture of gamma Fe2O3 and Fe3O4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200 DEG C for both steps when sputtering or evaporation is employed.