中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.016 seconds)

    ION IMPLANTATION APPARATUS
    3.
    发明专利
    ION IMPLANTATION APPARATUS 未知

    公开(公告)号：CA1057422A

    公开(公告)日：1979-06-26

    申请号：CA268534

    申请日：1976-12-22

    Applicant: IBM

    Inventor： ARNDT HERBERT L JR ,  BALDERES DEMETRIOS ,  KRANIK JOHN R ,  LUCAS CHARLES J

    IPC: H01J37/18 ,  H01J37/317 ,  H01L21/265 ,  G01N23/00

    Abstract: ION IMPLANTATION APPARATUS Disclosed is ion implantation apparatus in which an ion source is coupled to a semiconductor or workpiece holder which is mounted for rotation and reciprocation in a first chamber in the path of the ion beam. A second chamber is releasably coupled to the first chamber with means connected to the second chamber in such a manner as to enable displacement between the first and second chamber, the chambers being in fluid communication with one another when the apparatus is in operation. Vacuum drawing means are provided to effect a vacuum in both the first and second chamber when the apparatus is in operation, and when it is desired to withdraw the holder from the apparatus by disconnecting the second chamber from the first chamber, venting the first chamber automatically actuates a check valve which seals the second chamber permitting the retention of a vacuum in the second chamber while allowing the first chamber to be exposed to atmospheric pressure. The purpose of this abstract is to enable the public and the Patent Office to determine rapidly the subject matter of the technical disclosure of the Application. This abstract is neither intended to define the invention of the Application nor is it intended to be limiting as to the scope thereof.

    COOLING STRUCTURE FOR A SEMICONDUCTOR MODULE
    4.
    发明专利
    COOLING STRUCTURE FOR A SEMICONDUCTOR MODULE 未知

    公开(公告)号：DE2965795D1

    公开(公告)日：1983-08-04

    申请号：DE2965795

    申请日：1979-08-23

    Applicant: IBM

    Inventor： BALDERES DEMETRIOS ,  LYNCH JOHN RICHARD ,  YACAVONIS ROBERT ANTHONY

    IPC: H05K7/20 ,  H01L23/04 ,  H01L23/373 ,  H01L23/42 ,  H01L23/433 ,  H01L23/473 ,  H01L23/36

    Abstract: A semiconductor device package having a substrate, one or more semiconductor devices mounted on the top surface of the substrate, a heat sink having a surface in opposed spaced parallel relation to the top surface of the substrate, and at least one deformable heat transfer member positioned between a device mounted on the top surface of the substrate, and the surface of the heat sink. The heat transfer member is comprised of a porous block of material, and a heat conductive non-volatile liquid retained within the block of material by a surface tension. The heat transfer member being operative to transfer heat from the device to the heat sink.

    5.
    发明专利
    未知

    公开(公告)号：FR2336794A1

    公开(公告)日：1977-07-22

    申请号：FR7634522

    申请日：1976-11-08

    Applicant: IBM

    Inventor： ARNDT HERBERT L JR ,  BALDERES DEMETRIOS ,  KRANIK JOHN R

    IPC: H01J37/18 ,  H01J37/317 ,  H01J37/30 ,  H01L21/265

    Abstract: Disclosed is ion implantation apparatus in which an ion source is coupled to a semiconductor or workpiece holder which is mounted for rotation and reciprocation in a first chamber in the path of the ion beam. A second chamber is releasably coupled to the first chamber with means connected to the second chamber in such a manner as to enable displacement between the first and second chamber, the chambers being in fluid communication with one another when the apparatus is in operation. Vacuum drawing means are provided to effect a vacuum in both the first and second chamber when the apparatus is in operation, and when it is desired to withdraw the holder from the apparatus by disconnecting the second chamber from the first chamber, venting the first chamber automatically actuates a check valve which seals the second chamber permitting the retention of a vacuum in the second chamber while allowing the first chamber to be exposed to atmospheric pressure.

Patent Agency Ranking