公开(公告)号：DE69023478D1

公开(公告)日：1995-12-14

申请号：DE69023478

申请日：1990-03-05

Applicant: IBM

Inventor： BARTHA JOHANN W DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KRAUS GEORG ,  WOLTER OLAF DR

IPC: C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power

公开(公告)号：DE69023478T2

公开(公告)日：1996-06-20

申请号：DE69023478

申请日：1990-03-05

Applicant: IBM

Inventor： BARTHA JOHANN W DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KRAUS GEORG ,  WOLTER OLAF DR

IPC: C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power