公开(公告)号：DE69023478D1

公开(公告)日：1995-12-14

申请号：DE69023478

申请日：1990-03-05

Applicant: IBM

Inventor： BARTHA JOHANN W DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KRAUS GEORG ,  WOLTER OLAF DR

IPC: C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power

公开(公告)号：DE69023347T2

公开(公告)日：1996-05-30

申请号：DE69023347

申请日：1990-12-21

Applicant: IBM

Inventor： GRESCHNER JOHANN DR ,  NONNENMACHER MARTIN DR ,  WOLTER OLAF DR

IPC: G01B7/34 ,  B81B3/00 ,  B81C1/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q10/02 ,  G01Q10/04 ,  G01Q60/16 ,  H01J9/14 ,  H01J37/28

公开(公告)号：DE69023347D1

公开(公告)日：1995-12-07

申请号：DE69023347

申请日：1990-12-21

Applicant: IBM

Inventor： GRESCHNER JOHANN DR ,  NONNENMACHER MARTIN DR ,  WOLTER OLAF DR

IPC: G01B7/34 ,  B81B3/00 ,  B81C1/00 ,  G01N27/00 ,  G01N37/00 ,  G01Q10/02 ,  G01Q10/04 ,  G01Q60/16 ,  H01J9/14 ,  H01J37/28

公开(公告)号：DE69023478T2

公开(公告)日：1996-06-20

申请号：DE69023478

申请日：1990-03-05

Applicant: IBM

Inventor： BARTHA JOHANN W DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KRAUS GEORG ,  WOLTER OLAF DR

IPC: C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power

公开(公告)号：DE4029608A1

公开(公告)日：1992-04-02

申请号：DE4029608

申请日：1990-09-19

Applicant: IBM DEUTSCHLAND

Inventor： WOLTER OLAF DR ,  BARTHA JOHANN DR

IPC: H01G9/02 ,  H01G9/025 ,  H01L27/108 ,  H01L29/92

Abstract: The capactor (30) has a capacitorplate (31a) provided by a zone of the semiconductor substrate which is limited by a passivation layer. The second capacitor plate (31b) is provided by an electrically conductive layer applied to the surface of the semiconductor substrate. A thin layer (32) of an in conducting solid material is provided between the two material is provided between the two capacitor plates (31a, 31b). The ion conducting layer (32) comprises Rb Ag 4 J5 exhibiting a high in conductivity for Ag + ions at room temperature. USE - For dynamic random access memory cell.

公开(公告)号：DE3773904D1

公开(公告)日：1991-11-21

申请号：DE3773904

申请日：1987-03-27

Applicant: IBM DEUTSCHLAND

Inventor： BAYER THOMAS ,  ELSAESSER MICHAEL ,  GRESCHNER JOHANN DR ,  SCHMID HEINRICH ,  STOEHR ROLAND R ,  WOLTER OLAF DR ,  WITTLINGER JUERGEN

IPC: G01R31/26 ,  G01R1/073 ,  G01R31/28

Abstract: The contact pin arrangement exhibits below an embedment of the contact pins (2) in a plastic compound, a stack (1, 1a) of perforated plates through which the contact pins extend. The stack of perforated plates consists of two types of perforated plates. The first one is formed by the lowermost perforated plates (1a). They exhibit round or square holes which ensure a perpendicular placement of the contact pins on the contact areas (4) of the test specimen (5). The perforated plates (1) of the second type exhibit nothing but elongated holes, rectangular, square, circular, elliptic or trapezoidal holes (3). Of in each case three perforated plates of the second type stacked on top of one another, the centre one is offset with respect to the other two which are aligned with one another, in such a manner that each contact pin is enclosed by a part of the lower edge of the hole of the top and a part of the upper edge of the hole of the centre and by a part of the lower edge of the hole of the centre and a part of the upper edge of the hole of the lower perforated plate. As a result, the contact pin can bend at the most to the part of the hole wall limiting its maximum bending with an axial load. This ensures a sufficiently low contact resistance between the contact pin and the contact area of the test specimen. The contact pins can be adapted to differences in the height of the contact areas of the test specimen due to unevennesses of the surface of the test specimen by a correspondingly selected number of perforated plates of the second type.