公开(公告)号：DE112012003382T5

公开(公告)日：2014-04-30

申请号：DE112012003382

申请日：2012-08-15

Applicant: IBM

Inventor： GOPALAKRISHNAN KAILASH ,  VIRWANI KUMAR ,  SHENOY ROHIT SUDHIR ,  KELLOCK ANDREW JOHN ,  BETHUNE DONALD STIMSON

IPC: H01L27/10 ,  H01L21/768 ,  H01L29/82 ,  H01L29/86

Abstract: Eine kristalline Schottky-Barrieren-ähnliche Halbleiterdiode, die zwischen zwei leitenden Elektroden angeordnet ist, ist mit einem Speicherelement, einer Wortleitung und einer Bitleitung in Reihe geschaltet, wobei der Aufbau für Spannungsspielräume von mehr als 1 V und Stromdichten von mehr als 5 × 106 A/cm2 sorgt. Diese Schottky-Barrieren-ähnliche Diode kann unter Bedingungen hergestellt werden, die mit der Niedertemperatur-BEOL-Halbleiterverarbeitung kompatibel sind, kann bei niedrigen Spannungen hohe Stromstärken zuführen, zeigt hohe EIN/AUS-Verhältnisse und ermöglicht große Speicheranordnungen.

公开(公告)号：GB2508746A

公开(公告)日：2014-06-11

申请号：GB201403366

申请日：2012-08-15

Applicant: IBM

Inventor： VIRWANI KUMAR ,  GOPALAKRISHNAN KAILASH ,  SHENOY ROHIT SUDHIR ,  BETHUNE DONALD STIMSON ,  KELLOCK ANDREW JOHN

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/22 ,  H01L27/24

Abstract: A crystalline semiconductor Schottky barrier- like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than IV and current densities greater than 5x106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low- temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.

公开(公告)号：GB2508746B

公开(公告)日：2015-08-05

申请号：GB201403366

申请日：2012-08-15

Applicant: IBM

Inventor： VIRWANI KUMAR ,  GOPALAKRISHNAN KAILASH ,  SHENOY ROHIT SUDHIR ,  BETHUNE DONALD STIMSON ,  KELLOCK ANDREW JOHN

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/22 ,  H01L27/24

Abstract: A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.

公开(公告)号：DE3171243D1

公开(公告)日：1985-08-08

申请号：DE3171243

申请日：1981-10-09

Applicant: IBM

Inventor： BETHUNE DONALD STIMSON

IPC: G02B17/00 ,  F24S23/77 ,  G02B19/00 ,  G02B27/00 ,  H01S3/02 ,  H01S3/091 ,  H01S3/0915 ,  H01S3/094 ,  H01S3/20 ,  H01S3/213 ,  F24J2/24

Abstract: A right angle corner reflector is used to reflect different parts of a single incident collimated radiation beam such that a cylindrical region is equally irradiated transversely from four directions. The cylindrical region is positioned such that rays which strike the intersection of the corner reflector surfaces are tangent to the side of the cylindrical region. The cylindrical region is spaced from the corner reflector such that one quarter of the radiation incident upon the cylindrical region strikes the region directly, one quarter is first reflected from one of the corner reflector surfaces, one quarter is first reflected from the other corner reflector surface, and one quarter is reflected from first one and then the other corner reflector surface before striking the cylindrical region.