公开(公告)号：JP2011086950A

公开(公告)日：2011-04-28

申请号：JP2010272800

申请日：2010-12-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GOPALAKRISHNAN KAILASH ,  MITZI DAVID BRIAN ,  SHENOY ROHIT SUDHIR

IPC: H01L27/105 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L45/142 ,  C23C18/1204 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/1608

Abstract: PROBLEM TO BE SOLVED: To provide an electrolytic device based on a solution-processed electrolyte.
SOLUTION: The present disclosure relates to the solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and the second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种基于溶液处理电解质的电解装置。 解决方案：本公开内容涉及包含无定型硫族化物固体活性电解质层的固体电解质器件; 第一和第二金属层。 无定形硫族化物固体活性电解质层位于第一和第二金属层之间。 无定形硫族化物固体活性电解质层是通过将金属硫属元素化合物的肼类前体溶液获得的， 将溶液施加到基底上; 然后使前体退火以将前体转化为无定形金属硫族化物。 本公开还涉及制造固体电解质器件的方法。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：DE112012003382T5

公开(公告)日：2014-04-30

申请号：DE112012003382

申请日：2012-08-15

Applicant: IBM

Inventor： GOPALAKRISHNAN KAILASH ,  VIRWANI KUMAR ,  SHENOY ROHIT SUDHIR ,  KELLOCK ANDREW JOHN ,  BETHUNE DONALD STIMSON

IPC: H01L27/10 ,  H01L21/768 ,  H01L29/82 ,  H01L29/86

Abstract: Eine kristalline Schottky-Barrieren-ähnliche Halbleiterdiode, die zwischen zwei leitenden Elektroden angeordnet ist, ist mit einem Speicherelement, einer Wortleitung und einer Bitleitung in Reihe geschaltet, wobei der Aufbau für Spannungsspielräume von mehr als 1 V und Stromdichten von mehr als 5 × 106 A/cm2 sorgt. Diese Schottky-Barrieren-ähnliche Diode kann unter Bedingungen hergestellt werden, die mit der Niedertemperatur-BEOL-Halbleiterverarbeitung kompatibel sind, kann bei niedrigen Spannungen hohe Stromstärken zuführen, zeigt hohe EIN/AUS-Verhältnisse und ermöglicht große Speicheranordnungen.

公开(公告)号：GB2508746B

公开(公告)日：2015-08-05

申请号：GB201403366

申请日：2012-08-15

Applicant: IBM

Inventor： VIRWANI KUMAR ,  GOPALAKRISHNAN KAILASH ,  SHENOY ROHIT SUDHIR ,  BETHUNE DONALD STIMSON ,  KELLOCK ANDREW JOHN

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/22 ,  H01L27/24

Abstract: A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.

公开(公告)号：GB2508746A

公开(公告)日：2014-06-11

申请号：GB201403366

申请日：2012-08-15

Applicant: IBM

Inventor： VIRWANI KUMAR ,  GOPALAKRISHNAN KAILASH ,  SHENOY ROHIT SUDHIR ,  BETHUNE DONALD STIMSON ,  KELLOCK ANDREW JOHN

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/22 ,  H01L27/24

Abstract: A crystalline semiconductor Schottky barrier- like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than IV and current densities greater than 5x106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low- temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.