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    DEVICE AND METHOD FOR SENSING ETCHING END POINT OF INTEGRATED CIRCUIT
    1.
    发明专利
    DEVICE AND METHOD FOR SENSING ETCHING END POINT OF INTEGRATED CIRCUIT 失效

    公开(公告)号：JPH07201807A

    公开(公告)日：1995-08-04

    申请号：JP31290294

    申请日：1994-12-16

    Applicant: IBM

    Inventor： SUCHIIBUN JIYOOJI BAABII ,  TONII FUREDERITSUKU HAINTSU ,  ARURITSUCHI HOFUAA ,  REPINGU RII ,  BIKUTAA JIYOSEFU SHIRUBESUTORI

    IPC: G01B11/06 ,  G01N21/00 ,  G01N21/45 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

    Abstract: PURPOSE: To monitor an etching end point of a thin film on the surface of a wafer to be etched in real time on the spot by normalizing a secondary higher- harmonic component in real time and responding to a 1st and a 2nd output signal. CONSTITUTION: A sending-out means sends a 1st beam 52 to a border surface 12 between a film 10 and a substrate 20 at a specific angle of incidence. The 1st beam 52 is reflected by the border surface 12 to generate a 2nd beam 62. The 2nd beam 62 includes secondary higher-harmonic component generated as the primary higher-harmonic component of the 1st beam 52. The secondary higher-harmonic components are generated by the reflection of the 1st beam 52 at the border surface 12. A normalizing means which responds to the 1st and 2nd output signals normalizes the sent-out secondary higher-harmonic component of the 1st beam 52 to generate a 3rd output signal, representing the generation of specific variation of the normalized sent-out secondary higher-harmonic component, and the specific vibration corresponds to the etching end point of the film 10 on the substrate 20. Namely, realtime field end point detection can be performed.

    SEMICONDUCTOR STRUCTURE AND ITS MANUFACTURE
    2.
    发明专利
    SEMICONDUCTOR STRUCTURE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH05206258A

    公开(公告)日：1993-08-13

    申请号：JP25901192

    申请日：1992-09-01

    Applicant: IBM

    Inventor： KURAUSU DEIETORITSUCHI BEIYAA ,  BIKUTAA JIYOSEFU SHIRUBESUTORI ,  ANDORIE SECHIAWAN YAPUSAA

    IPC: H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L21/768 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    Abstract: PURPOSE: To completely isolate a film on an isolation area easily and surely from a substrate by forming an inductor of air by selectively etching the under side of the isolation area and in the lateral direction to remove an N -layer and to form a cavity. CONSTITUTION: An N -layer 52 is prepared on a substrate 50. An isolating layer 54 is formed on the N -type doped layer 52. A pair of trenches 56 and 58 are formed by etching the N -layer 52 through the isolating layer 54, and an isolation area 60 made of isolating material is formed. The underside of the isolation area 60 is etched in the lateral direction to form a cavity 62. The isolation area 60 is isolated by air in the cavity 62. A film 64 formed on the isolation area 60 is completely isolated from the substrate 50 by the isolation area 60, and the cavity 62 of air and is not affected by thermal stress.

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