公开(公告)号：DE3784117D1

公开(公告)日：1993-03-25

申请号：DE3784117

申请日：1987-07-14

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  GIAMMARCO NICHOLAS JAMES ,  HANSEN THOMAS ADRIAN ,  KAPLITA GEORGE ANTHONY ,  LECHATON JOHN S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/263

Abstract: Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a fluorochlorohydrocarbon (e.g., CCl2F2, CHCl2F2, CCl4 or CCl3F), SF6, O2 and an inert gas (e.g. He). The preferred gas mixture contains 2/1 ratio of the fluorochlorocarbon to SF6 and the following composition: 1-4 % of SF6, 3-10 % of O2, 74-93 % of He and 3-10 % of fluorochlorohydrocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.

公开(公告)号：DE3784117T2

公开(公告)日：1993-08-12

申请号：DE3784117

申请日：1987-07-14

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  GIAMMARCO NICHOLAS JAMES ,  HANSEN THOMAS ADRIAN ,  KAPLITA GEORGE ANTHONY ,  LECHATON JOHN S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/263

Abstract: Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a fluorochlorohydrocarbon (e.g., CCl2F2, CHCl2F2, CCl4 or CCl3F), SF6, O2 and an inert gas (e.g. He). The preferred gas mixture contains 2/1 ratio of the fluorochlorocarbon to SF6 and the following composition: 1-4 % of SF6, 3-10 % of O2, 74-93 % of He and 3-10 % of fluorochlorohydrocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.

公开(公告)号：DE2861453D1

公开(公告)日：1982-02-11

申请号：DE2861453

申请日：1978-08-07

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  POGGE HANS BERNHARD

IPC: H01L21/76 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762 ,  H01L21/263

Abstract: A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.

公开(公告)号：DE68901789T2

公开(公告)日：1993-01-28

申请号：DE68901789

申请日：1989-01-17

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  MARTINET FRANCOIS DOMINIQUE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  C23F4/00

Abstract: A gas mixture for use in the selective dry etching of a nitride insulator layer (16) relative to an oxide insulator layer (12) formed on a silicium substrate (10) comprising: a gas mixture containing chlorine and oxygen. The oxygen in this gas mixture must comprise 15% or less by volume. In a preferred process embodiment for etching Si3N4 and leaving a layer of SiO2 therebelow, Cl2 gas may be used in combination with 12% or less oxygen by volume. Etch selectivity of greater than five to one is achieved with this gas mixture when a plasma RF frequency of less than 1 MHz is utilized. When a high frequency RF component in the range of 10 - 27 MHz is added to the RF excitation signal, then an etch uniformity of better than 3% is achieved.

公开(公告)号：DE68901789D1

公开(公告)日：1992-07-23

申请号：DE68901789

申请日：1989-01-17

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  MARTINET FRANCOIS DOMINIQUE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  C23F4/00

Abstract: A gas mixture for use in the selective dry etching of a nitride insulator layer (16) relative to an oxide insulator layer (12) formed on a silicium substrate (10) comprising: a gas mixture containing chlorine and oxygen. The oxygen in this gas mixture must comprise 15% or less by volume. In a preferred process embodiment for etching Si3N4 and leaving a layer of SiO2 therebelow, Cl2 gas may be used in combination with 12% or less oxygen by volume. Etch selectivity of greater than five to one is achieved with this gas mixture when a plasma RF frequency of less than 1 MHz is utilized. When a high frequency RF component in the range of 10 - 27 MHz is added to the RF excitation signal, then an etch uniformity of better than 3% is achieved.