公开(公告)号：DE3784117D1

公开(公告)日：1993-03-25

申请号：DE3784117

申请日：1987-07-14

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  GIAMMARCO NICHOLAS JAMES ,  HANSEN THOMAS ADRIAN ,  KAPLITA GEORGE ANTHONY ,  LECHATON JOHN S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/263

Abstract: Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a fluorochlorohydrocarbon (e.g., CCl2F2, CHCl2F2, CCl4 or CCl3F), SF6, O2 and an inert gas (e.g. He). The preferred gas mixture contains 2/1 ratio of the fluorochlorocarbon to SF6 and the following composition: 1-4 % of SF6, 3-10 % of O2, 74-93 % of He and 3-10 % of fluorochlorohydrocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.

公开(公告)号：DE3784117T2

公开(公告)日：1993-08-12

申请号：DE3784117

申请日：1987-07-14

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  GIAMMARCO NICHOLAS JAMES ,  HANSEN THOMAS ADRIAN ,  KAPLITA GEORGE ANTHONY ,  LECHATON JOHN S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/263

Abstract: Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a fluorochlorohydrocarbon (e.g., CCl2F2, CHCl2F2, CCl4 or CCl3F), SF6, O2 and an inert gas (e.g. He). The preferred gas mixture contains 2/1 ratio of the fluorochlorocarbon to SF6 and the following composition: 1-4 % of SF6, 3-10 % of O2, 74-93 % of He and 3-10 % of fluorochlorohydrocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.