公开(公告)号：JPH087235A

公开(公告)日：1996-01-12

申请号：JP5754995

申请日：1995-03-16

Applicant: IBM

Inventor： KEBUIN ROBAATO KOFUI ,  BURUUSU ARUBUIN GAANII ,  DEBITSUDO YUUJIN HAIMU ,  HARARANBOSU REFUAAKISU ,  DANIIRU MAURI ,  BUAAJIRU SAIMON SUPERIOOSU ,  DENISU RICHIYAADO UIRUHOITO

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

Abstract: PURPOSE: To remove defects accompanied by a Fe-Mn exchange coupling layer by a method wherein a spin valve magneto resistive element does not contain a strong bias layer or an exchange bias layer for pin stopping of magnetization of a second ferromagnetic layer. CONSTITUTION: A magnetization direction of two Co films 72, 74 of a laminated pin stopping layer 70 is shown with arrows 76, 78. A reverse parallel alignment of magnetization of the two Co films 72, 74 is made by antiferromagnetic exchange coupling by a Ru antiferromagnetic coupling film 73. For this antiferromagnetic coupling, since the two Co films 72, 74 can also have a substantially same thickness, magnetic moments of each film can be cancelled essentially and mutually. Accordingly, net magnetic moment of the laminated layer 70 becomes substantially smaller than the total of magnetic moment of the two separate films 72, 74.

公开(公告)号：JPH0916920A

公开(公告)日：1997-01-17

申请号：JP15082696

申请日：1996-06-12

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA JIYU ,  BURUUSU ARUBUIN GAANII ,  TSUAN RIN ,  BUAAJIRU SAIMON SUPERIOOSU ,  CHIN HOWA TSUAN ,  DENISU RICHIYAADO UIRUHOITO

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To obtain a spin valve magneto-resistive (SVMR) sensor having an antiferromagnetic layer which is resistant to corrosion and is high in blocking temp. by using laminated antiparallel pin stopping layers in combination with the antiferromagnetic layer of an improved type. SOLUTION: The antiferromagnetic layer(AF) 57 is nickel oxide and a layer 57 is formed on a seed layer 55. PF1 /APC/PF2 laminated pin stopping layers 70 are formed on the layer 57. Two-layered ferromagnetic layers 72, 74 are formed of Co and are separated by antiparallel coupled(APC) films 73 of nonferromagnetic materials which are formed of Co and are equal or approximately equal in magnetic moment and antiferromagnetically strongly bond PF1 and PF2 . The Co films 72, 74 in the layers 70 are oriented antiparallel in magnetization direction as shown by arrows 75, 76. The magnetic moments in the films 72, 74 are, therefore, negated by each other and the net magnetic moment in the layers 70 is extremely small or does not substantially exist. Consequently, the amplitude of high exchange magnetic fields is resulted.