公开(公告)号：JPH0845032A

公开(公告)日：1996-02-16

申请号：JP12210495

申请日：1995-05-22

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA ,  TSUAN RIN ,  CHIN FUA TSUAN

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01L43/10

Abstract: PURPOSE: To facilitate manufacture by overlaying an end region of a free ferromagnetic layer with a layer made of an antiferromagnetic material so as to bias the end region. CONSTITUTION: A buffer layer 62, a free ferromagnetic layer 63, a spacer layer 65 of copper, a constrained ferromagnetic layer 70 and an antiferromagnetic layer 66 are sequentially stacked on a substrate 61, thus constituting a spin valve sensor. The free ferromagnetic layer 63 is made of Ni80-85-Fe, and has magnetization in a direction of an arrow 64 when there is no external magnetic field. The antiferromagnetic layer 66 is made of Fe-Mn, and constrains magnetization of the constrained ferromagnetic layer 70 in a direction of an arrow 71 by exchange coupling. A layer 91 made of an Ni-Mn antiferromagnetic material biases the horizontal magnetization 64 of the free ferromagnetic layer 63 via an end region 90 made of Ni-Fe. The magnetization 64 of the free ferromagnetic layer 63 is rotated by a magnetic field from a magnetic recording medium, and a change in resistance caused by the rotation is taken out as a signal via a terminal layer 92.

公开(公告)号：JPH0916920A

公开(公告)日：1997-01-17

申请号：JP15082696

申请日：1996-06-12

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA JIYU ,  BURUUSU ARUBUIN GAANII ,  TSUAN RIN ,  BUAAJIRU SAIMON SUPERIOOSU ,  CHIN HOWA TSUAN ,  DENISU RICHIYAADO UIRUHOITO

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To obtain a spin valve magneto-resistive (SVMR) sensor having an antiferromagnetic layer which is resistant to corrosion and is high in blocking temp. by using laminated antiparallel pin stopping layers in combination with the antiferromagnetic layer of an improved type. SOLUTION: The antiferromagnetic layer(AF) 57 is nickel oxide and a layer 57 is formed on a seed layer 55. PF1 /APC/PF2 laminated pin stopping layers 70 are formed on the layer 57. Two-layered ferromagnetic layers 72, 74 are formed of Co and are separated by antiparallel coupled(APC) films 73 of nonferromagnetic materials which are formed of Co and are equal or approximately equal in magnetic moment and antiferromagnetically strongly bond PF1 and PF2 . The Co films 72, 74 in the layers 70 are oriented antiparallel in magnetization direction as shown by arrows 75, 76. The magnetic moments in the films 72, 74 are, therefore, negated by each other and the net magnetic moment in the layers 70 is extremely small or does not substantially exist. Consequently, the amplitude of high exchange magnetic fields is resulted.