公开(公告)号：JPH07262519A

公开(公告)日：1995-10-13

申请号：JP32546794

申请日：1994-12-27

Applicant: IBM

Inventor： MOHAMADO TOUFUIKU KUROUNBII ,  JII SHIYUEI JIERII ROO ,  CHIN HOWA TSUAN ,  ROBAATO EMU BUARETSUTA

IPC: G11B5/31 ,  G11B5/39

Abstract: PURPOSE: To vertically align the side wall of a magnetic pole terminal layer with the side wall of an top magnetic pole terminal element by providing a magnetic pole terminal vertically aligned for minimizing side writing. CONSTITUTION: A write head 52 is provided with a magnetic pole terminal area placed between an air bearing surface ABS and a '0' throat level and a yoke area or a back area which is extended backward from the '0' throat level to a back gap and includes the back gap. Then, the head 52 is provided with a bottom pole element P1 and a top pole element P2, and the bottom pole element P1 consists of a 2nd shield layer S2 of an MR read head 50. The bottom pole element P1 and top pole element P2 respectively have back layer parts placed in the back area and the back layer parts of the pole elements are magnetically coupled at the back gap BG. The bottom pole element P1 is provided with magnetic pole terminal structure placed in a magnetic pole terminal area between the ABS and the '0' throat level. The MR compound head vertically aligning the side wall of a magnetic pole terminal layer PT1b with the side wall of a top magnetic pole terminal element PT2 can be provided.

公开(公告)号：JPH0916920A

公开(公告)日：1997-01-17

申请号：JP15082696

申请日：1996-06-12

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA JIYU ,  BURUUSU ARUBUIN GAANII ,  TSUAN RIN ,  BUAAJIRU SAIMON SUPERIOOSU ,  CHIN HOWA TSUAN ,  DENISU RICHIYAADO UIRUHOITO

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To obtain a spin valve magneto-resistive (SVMR) sensor having an antiferromagnetic layer which is resistant to corrosion and is high in blocking temp. by using laminated antiparallel pin stopping layers in combination with the antiferromagnetic layer of an improved type. SOLUTION: The antiferromagnetic layer(AF) 57 is nickel oxide and a layer 57 is formed on a seed layer 55. PF1 /APC/PF2 laminated pin stopping layers 70 are formed on the layer 57. Two-layered ferromagnetic layers 72, 74 are formed of Co and are separated by antiparallel coupled(APC) films 73 of nonferromagnetic materials which are formed of Co and are equal or approximately equal in magnetic moment and antiferromagnetically strongly bond PF1 and PF2 . The Co films 72, 74 in the layers 70 are oriented antiparallel in magnetization direction as shown by arrows 75, 76. The magnetic moments in the films 72, 74 are, therefore, negated by each other and the net magnetic moment in the layers 70 is extremely small or does not substantially exist. Consequently, the amplitude of high exchange magnetic fields is resulted.

公开(公告)号：JPH08241508A

公开(公告)日：1996-09-17

申请号：JP33694095

申请日：1995-12-25

Applicant: IBM

Inventor： FUN RIAN FUU ,  RODONII EDOGAA RII ,  HIYUUGOO ARUBERUTO EMIRIO SANT ,  CHIN HOWA TSUAN

IPC: G11B5/265 ,  G11B5/31 ,  G11B5/39

Abstract: PROBLEM TO BE SOLVED: To reduce the magnetic resistance of the write coil of an MR head, by extending its insulator stack region from its magnetic-pole end region to its rear gap to dispose its coil region in its insulator stack region separately from its magnetic-pole end region. SOLUTION: The figure shows a merge type MR head constituting an embodiment 30B. The head 30B has a magnetic-pole end region, an insulator stack region and a coil region, and the magnetic-pole end region extends from an ABS to the insulator stack region extended from the magnetic-pole end to a rear gap, and the coil region is disposed in the insulator stack region separately from the magnetic-pole end region. In the embodiment 30B, first and second shield layers S1, S2 are disposed in the magnetic-pole end region to protect an MR sensor. Also, in the embodiment 30B, the first shield layer S1 extends along a slope 50 between the magnetic-pole end region and the coil region to terminate in a position between both the regions. Thereby, there is generated a sunk or recessed portion 51 for the succeeding thin-film layer of the head which constitutes the insulator stack, and a second gap layer G2 extends along the slope 50 of the first shield layer S1 to extend further from the slope 50 to the rear region of the head orthogonally to the ABS.

公开(公告)号：JPH0684145A

公开(公告)日：1994-03-25

申请号：JP167393

申请日：1993-01-08

Applicant: IBM

Inventor： MAO MIN CHIEN ,  KOCHIYAN JIYU ,  MOHAMADO TEII KURUNBII ,  CHIN HOWA TSUAN ,  POO KAN WAN

IPC: G11B5/39

Abstract: PURPOSE: To improve the stability and the bias profile of a magnetic resistance(MR) read transducer. CONSTITUTION: The MR read transducer having end passive areas 38 separated by a central active area 34 is provided with an MR layer 31 made of a material having low coaxial magnetic anisotropy. A soft magnetic bias layer 33 is adjacent only to the central area of the MR layer but it is detached 32 and it is formed by a material having high coaxial magnetic anisotropy. Vertical direction bias is directly generated only in respective end areas. A means for generating vertical bias is provided with layers 35 formed by the materials having high coaxial magnetic anisotropy. When the material having appropriate magnetic distortion or peculiar coaxial anisotropy is selected, coaxial anisotropy can be controlled.

公开(公告)号：JPH05217126A

公开(公告)日：1993-08-27

申请号：JP22437392

申请日：1992-08-24

Applicant: IBM

Inventor： MAO MIN CHIEN ,  CHIN HOWA TSUAN

IPC: G11B5/39

Abstract: PURPOSE: To increase the size of an exchange bias by providing a thin layer of antiferromagnetic material contact with thin MR layer of a ferromagnetic material and the thin layer of mutual diffusion material in contact with the layer of the antiferromagnetic material. CONSTITUTION: The magnetoresistive(MR) sensor 10 is provided with thin MR layer 12 of the ferromagnetic material spread only on a central active area 11. The thin layer 14 of the antiferromagnetic material is stuck so as to be brought into boundary contact with the MR layer 12. Thus, anisotropy in the one direction occurs by exchange joint between both ends of the boundary between both layers 12, 14, and the movement of the MH loop of the MR layer called as a vertical direction exchange bias magnetic field occurs. A horizontal direction bias is generated by a soft magnetic field layer (not shown in figure) separated from the MR layer by a thin non-magnetic spacer layer (not shown in the figure) for preventing magnetic exchange between the MR layer 12 and a soft magnetic bias layer. A conductor lead 16 is constituted of a layer structure of a Ta thin film 20, an Au, etc., good conductor layer 22 and a Ta thin capping layer 24.