公开(公告)号：US3559185A

公开(公告)日：1971-01-26

申请号：US3559185D

申请日：1968-08-07

Applicant: IBM

Inventor： BURNS GERALD ,  SMITH ARCHIBALD W ,  SMITH WILLIAM V

IPC: G02F1/05 ,  G09G3/34 ,  G11C11/22 ,  G11C11/23 ,  G11C13/04 ,  G11C11/42

CPC classification number: G11C13/047 ,  G02F1/0525 ,  G09G3/34 ,  G11C11/22 ,  G11C11/23

Abstract: A crystalline material gadolinium molybdate, CD3(MoO4)3 has been determined to have reversible birefringence, the sign of the birefringence depending upon the direction of polarization along the ferroelectric axis of the Gd3(MoO4)3 crystal. Thus, if the ferroelectric axis is chosen as the c-axis (or optical axis), the a-axis and b-axis are two other crystallographic axes that are perpendicular to such c-axis, and the index of refraction of light polarized along the a-axis i different from the index of refraction of light polarized along the b-axis. The property of the reversibility of the birefringence enables one to optically sense the direction of light sent through the crystal, parallel to the c-axis. Such a crystal can be used in various optical switching and memory devices.

Abstract translation: 1,253,168。 调光 国际商业机器公司1969年7月22日[1968年8月7日]，第36770/69号。 标题H4F。 [也在G4部分]可以用作存储元件的光学开关包括用于在与其c轴平行的Gd 2（MoO 4）3的晶体上施加电场的装置，该晶体是铁电体并显示出可逆的 双折射，即它将保持在两个双折射状态之一中，这取决于在阈值（切换）值之上的最后施加的电场的极性，两个状态的关联在于快轴和慢轴互换。 在一个实施例中，晶体设置有透明银电极并形成四分之一波长板，使得线性偏振输入光随着晶体的状态而以手环圆极化的方式出现。 然后另一个四分之一波片和分析仪将阻挡或将出射光传递到检测器。 还描述和示出了这样的单元的X-Y可寻址阵列，并且随后的四分之一波片和分析器可以形成为阵列上的整体膜。 在第二实施例中，一个电极是反射性的。 银或铜，另一种为带状或透明的形式，使得由分束器引导通过晶体的线偏振激光通过具有左或右圆偏振的分离器反射回。 电子枪使用较高能量的电子束来对反射电极进行负电荷，通过低电压束或二次发射来充电，因此切换晶体。 来自分束器的光再次通过四分之一波片和分析仪。 这样的存储单元的阵列可以由单个电子束操作，并且分析的光传递到电子束扫描管的光导层。

公开(公告)号：US3509489A

公开(公告)日：1970-04-28

申请号：US3509489D

申请日：1967-04-13

Applicant: IBM

Inventor： BURNS GERALD ,  SMITH ARCHIBALD W

IPC: H01S3/101 ,  H01S3/00 ,  G02F1/32

CPC classification number: H01S3/101

公开(公告)号：US3640865A

公开(公告)日：1972-02-08

申请号：US3640865D

申请日：1970-04-09

Applicant: IBM

Inventor： BURNS GERALD ,  GIESS EDWARD A ,  O'KANE DANIEL F

IPC: C04B35/495 ,  H01L41/187 ,  C04B35/00 ,  C04B35/60

CPC classification number: C04B35/495 ,  H01L41/1873

Abstract: New transparent ferroelectric compositions have been prepared having a tetragonal tungsten-bronze-type crystallographic structure and having the formula x(ANbO3) . (1-x) MNb2O6 where A is at least one alkali metal ion and M is an alkaline earth metal ion and where x can be from 0.12 to 0.50. These materials have large dielectric constants, ( Epsilon ), and linear electro-optic coefficients (r), at room temperature. The value of r is significantly larger than that of LiNbO3. These materials have great potential as light modulators and deflectors.

Abstract translation: 已经制备了具有四方钨 - 青铜型晶体结构并具有式x（ANbO 3）的新型透明铁电组合物。 （1-x）MNb 2 O 6，其​​中A为至少一种碱金属离子，M为碱土金属离子，x为0.12至0.50。 这些材料在室温下具有很大的介电常数（ε）和线性电光系数（r）。 r的值显着大于LiNbO3的值。 这些材料作为光调制器和偏转器具有很大的潜力。

公开(公告)号：DE1937842A1

公开(公告)日：1970-02-12

申请号：DE1937842

申请日：1969-07-25

Applicant: IBM

Inventor： BURNS GERALD ,  WILLIAM SMITH ARCHIBALD ,  VICTOR SHMITH WILLIAM

IPC: G02F1/05 ,  G09G3/34 ,  G11C11/22 ,  G11C11/23 ,  G11C13/04

Abstract: 1,253,168. Modulating light. INTERNATIONAL BUSINESS MACHINES CORP. 22 July, 1969 [7 Aug., 1968], No. 36770/69. Heading H4F. [Also in Division G4] An optical switch which may be used as a memory element comprises means for applying an electric field across a crystal of Gd 2 (MoO 4 ) 3 , parallel to its c-axis, the crystal being ferroelectric and showing reversible birefringence, i.e. it will remain in one of two birefringent states depending on the polarity of the last applied electric field above a threshold (switching) value, the two states being related in that the fast and slow axes are interchanged. In one embodiment the crystal is provided with transparent silver electrodes and forms a quarterwave plate so that linearly polarized input light emerges as circularly polarized, of a hand dependent on the state of the crystal. A further quarter-wave plate and an analyser will then block or pass the emergent light to a detector. An X-Y addressable array of such cells is also described and shown, and the subsequent quarter-wave plate and analyser may be formed as a unitary film over the array. In a second embodiment, one electrode is reflective, e.g. silver or copper, and the other is in the form of strips or is transparent, so that linearly polarized laser light directed by a beam splitter through the crystal is reflected back through the splitter with left or right circular polarization. An electron gun charges the reflective electrode either negatively, with a low voltage beam, or positively, by secondary emission, using a higher energy beam, and so switches the crystal. Light from the beam splitter is again passed through a quarter-wave plate and analyser. An array of such memory cells may be operated by a single electron beam and the analysed light passed to the photo-conductive layer of an electron beam scanning tube.

公开(公告)号：DE1183599B

公开(公告)日：1964-12-17

申请号：DEJ0024565

申请日：1963-10-15

Applicant: IBM

Inventor： BURNS GERALD ,  DILL FREDERICK HAYER ,  DUMKE WILLIAM PAUL ,  LASHER GORDON JEWETT ,  NATHAN MARSHALL IRA

IPC: H01S5/024 ,  H01S5/18 ,  H01S5/32

Abstract: 1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction.

公开(公告)号：DE1764153A1

公开(公告)日：1971-05-13

申请号：DE1764153

申请日：1968-04-11

Applicant: IBM

Inventor： BURNS GERALD ,  WILLIAM SMITH ARCHIBALD

IPC: H01S3/101 ,  H01S3/10

Abstract: 1,147,587. Lasers. INTERNATIONAL BUSINESS MACHINES CORP. 12 March, 1968 [13 April, 1967], No. 11874/68. Heading H1C. A laser beam is emitted in a required direction by transmitting an ultrasonic beam transverse to the plurality of resonant paths in a degenerate optical resonator, the ultrasonic beam causing that resonant path which is diffracted at the Bragg angle to become effective. Scanning is effected by changing the frequency of the ultrasonic beam so that a different resonant path is diffracted at the Bragg angle. The ultrasonic beam may be propagated through the active medium 6, Fig. 1, which may be ruby, neodymium-doped yttrium aluminium garnet or suitably doped LiNbO 3 , or the beam may be transmitted through an ultrasonic medium 26, Fig. 2, separate from a ruby or a gaseous active medium 25. The degenerate resonator is formed in Fig. 1 by spherical mirrors 2, 4, and the active medium 6 is provided with curved surfaces 16, 18 which assist in focusing laser light in the resonator on to the spherical mirrors. The ultrasonic beam is produced in the active medium by applying a signal from a high frequency oscillator 10 to a zinc oxide or cadmium sulphide transducer element 8 cemented or vapour deposited on the active medium, the transmitted ultrasonic beam being absorbed on the other side of the active medium by an absorber 12 such as glass. A transducer element is unnecessary if the active medium has piezo-electric properties, e.g. a suitably doped LiNbO 3 crystal. In Fig. 2 the resonator is formed by a spherical mirror 2 incorporating an operative stop 32 and a plane mirror 24, the arrangement in association with a lens 30 providing separate paths for each direction of light diffracted in the separate fused quartz or water ultrasonic medium 26, the arrangement neutralizing a shift in the laser light frequency which would otherwise be obtained. Two dimensional scanning may be obtained by using two orthogonal ultrasonic media.

公开(公告)号：CA812985A

公开(公告)日：1969-05-13

申请号：CA812985D

Applicant: IBM

Inventor： LASHER GORDON J ,  DILL FREDERICK H ,  DUMKE WILLIAM P ,  NATHAN MARSHALL I ,  BURNS GERALD