公开(公告)号：DE2826329A1

公开(公告)日：1979-01-11

申请号：DE2826329

申请日：1978-06-16

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  REISMAN ARNOLD ,  ZIRINSKY STANLEY

IPC: B05B1/00 ,  B41J2/135 ,  C04B41/53 ,  C04B41/91 ,  C23F1/00 ,  G01F1/42 ,  H01L21/308 ,  H03H7/06 ,  B44C1/22 ,  C23F1/02

Abstract: A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.

公开(公告)号：FR2395820A1

公开(公告)日：1979-01-26

申请号：FR7816947

申请日：1978-05-29

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  REISMAN ARNOLD ,  ZIRINSKY STANLEY

IPC: B05B1/00 ,  B41J2/135 ,  C04B41/53 ,  C04B41/91 ,  C23F1/00 ,  G01F1/42 ,  H01L21/308 ,  H03H7/06 ,  B28D5/06 ,  B41J3/04

Abstract: A method for etching at least one aperture having a defined crystallographic geometry in single crystals which includes masking the crystal to protect predetermined portions thereof from being etched, and then anisotropically etching with a mixture of sulfuric acid and phosphoric acid.

公开(公告)号：DE2643596A1

公开(公告)日：1977-04-14

申请号：DE2643596

申请日：1976-09-28

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  LANDERMANN JOAN ,  REISMAN ARNOLD ,  TAKAMORI TAKESHI

IPC: C03C8/24 ,  C03C27/00