公开(公告)号：DE3674332D1

公开(公告)日：1990-10-25

申请号：DE3674332

申请日：1986-10-22

Applicant: IBM

Inventor： CHANDRASHEKHAR G V ,  SHAFER MERRILL WILBERT

IPC: B41J2/135 ,  B41J2/16 ,  C03C17/34 ,  B41J2/14

公开(公告)号：DE3066485D1

公开(公告)日：1984-03-15

申请号：DE3066485

申请日：1980-06-09

Applicant: IBM

Inventor： CHANDRASHEKHAR G V ,  GAMBINO RICHARD JOSEPH ,  CHAUDHARI PRAVEEN ,  HARPER JAMES MCKEEL EDWIN ,  CUOMO JEROME JOHN

IPC: B23K15/00 ,  H01J3/04 ,  H01J27/02 ,  H01J27/20 ,  H01J37/08 ,  H01L21/265 ,  H01L27/00

Abstract: The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.