公开(公告)号：US3668480A

公开(公告)日：1972-06-06

申请号：US3668480D

申请日：1970-07-21

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/86 ,  H01L3/14

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L29/86

Abstract: A semiconductor diode having multiple Voltage characteristics and its method of fabrication is disclosed. When a voltage is applied in the forward direction to the diode, at some threshold, the current switches to a higher value of current. A decrease of the voltage causes a decrease in the current and, after a reverse voltage applied, reverse current values of increasing magnitude are obtained until a threshold is reached. When the threshold is reached, the diode switches from a high value of reverse current to a lower value of reverse current. A decrease in the reverse voltage to zero, reduces the current to zero and, increasing the voltage in the forward direction starts the above-described cycle over again. By adjusting the forward and reverse voltages, switching may occur at values higher than the thresholds and a family of voltage-current characteristics is obtained. A typical device consists of n-conductivity type gallium arsenide into which a region of deep centers has been diffused. A typical deep center of oxygen. A semiconductor junction which is alloyed, diffused or of the Schottky barrier type is formed with the deep center region. Where the junction formed is of the alloyed type, for example, an indium-zinc alloy may be used. Finally, an ohmic contact of gold-tin is applied to the semiconductor body. Forward voltages in the neighborhood of 1 volt provide switching in the forward direction while reverse voltages of as little as 3 volts cause switching in the reverse direction. A diode fabrication technique is also disclosed.

Abstract translation: 公开了具有多个电压特性的半导体二极管及其制造方法。 当向正方向施加电压到二极管时，在某个阈值处，电流切换到较高的电流值。 电压的降低导致电流的降低，并且在施加反向电压之后，获得增加幅度的反向电流值，直到达到阈值。 当达到阈值时，二极管从反向电流的高值切换到较低的反向电流值。 将反向电压降低到零，将电流减小到零，并且正向增加电压再次开始上述循环。 通过调整正向和反向电压，可以在高于阈值的值下进行切换，并获得一系列电压 - 电流特性。 典型的器件由n导电型砷化镓组成，深中心区域已经扩散到其中。 典型的深中心的氧气。 合金化，扩散或肖特基势垒型的半导体结形成有深中心区域。 在形成的接合点为合金型的情况下，例如可以使用铟 - 锌合金。 最后，将金锡的欧姆接触施加到半导体本体。 在1伏附近的正向电压提供正向开关，而反向电压低至3伏则导致反向切换。 还公开了二极管制造技术。

公开(公告)号：US3450960A

公开(公告)日：1969-06-17

申请号：US3450960D

申请日：1965-09-29

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO

IPC: H01L29/00 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/7831 ,  H01L29/00

公开(公告)号：DE69008770T2

公开(公告)日：1994-11-24

申请号：DE69008770

申请日：1990-01-11

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO ,  MUNEKATA HIRO ,  OHNO HIDEO ,  VON MOLNAR STEPHAN

IPC: C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L21/20 ,  H01L21/203 ,  H01L43/10 ,  H01F1/00 ,  C30B29/40

公开(公告)号：CA2000024C

公开(公告)日：1993-02-02

申请号：CA2000024

申请日：1989-10-02

Applicant: IBM

Inventor： CHANG LEROY L

IPC: H01L29/73 ,  G02F1/017 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/76 ,  H01L29/88 ,  H01L31/0352 ,  H01L31/10 ,  H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/343 ,  H01L29/86

Abstract: A resonant tunneling semiconductor device is disclosed including first and second layers of n type semiconductor crystal, each having an n doping level between 1016 and 1017 cm-3 , separated by first and second barriers of semiconductor crystal having therebetween a quantum well of p type semiconductor crystal, having a p doping level between 1016 and 1017 cm-3. Conduction occurs by tunneling serially through the first and second barriers. The first and second layers of n type semiconductor crystal have a composition of substitute alloy element x2 . The quantum well of p type semiconductor material has a composition of substitute alloy element x1, and the first and second barriers of semiconductor crystal have a composition of substitute alloy element x3 , wherein x1

公开(公告)号：CA2000024A1

公开(公告)日：1990-09-20

申请号：CA2000024

申请日：1989-10-02

Applicant: IBM

Inventor： CHANG LEROY L

IPC: H01L29/73 ,  G02F1/017 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/76 ,  H01L29/88 ,  H01L31/0352 ,  H01L31/10 ,  H01L33/06 ,  H01S5/00 ,  H01S5/042 ,  H01S5/343

Abstract: This invention relates to resonant tunneling semiconductor devices useful for transport functions such as switching or amplification, and also for electrooptical conversions. In the structure of these devices, a central potential well (10) is formed of an opposite conductivity type of semiconductor material to two semiconductor layers (12) outside resonant tunneling barriers (14) on each side of the central potential well (10), such that electrons in the well (10) can tunnel to and from the outside semiconductor layers (12). An alloyed reach-through contact formed of the same conductivity type semiconductor material as the central potential well (10) is extending to the central potential well (10). The central potential well (10) serves as the base of a three terminal device in transport applications, and as the light responsive portion for electro-optical applications. In one disclosed embodiment, the device is constructed in five layers of the most commonly used gallium-aluminum-arsenide compounds, an n GaAlAs substrate, undoped GaAlAs, p GaAlAs, undoped GaAlAs, and n GaAlAs.

公开(公告)号：CA1236590A

公开(公告)日：1988-05-10

申请号：CA501112

申请日：1986-02-05

Applicant: IBM

Inventor： ESAKI LEO ,  CHANG LEROY L ,  WANG WEN-I

IPC: H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/205 ,  H01L29/43 ,  H01L29/778 ,  H01L29/78 ,  H01L29/80 ,  H01L29/76

Abstract: SEMI CONDUCTOR DEVICE WITH HOLE CONDUCTION VIA STRAINED LATTICE A field-effect transistor includes a conduction channel between a source terminal and a drain terminal, which channel employs holes as the charge carriers. The conduction channel is disposed within a layer of material comprising a group III-V compound of the periodic table and having a crystalline lattice structure which is stressed in two dimensions by means of epitaxial growth upon a thicker and rigid supporting layer comprising a different group III-V compound having a larger lattice spacing. The layer having the conduction channel is relatively thin being on the order of a few electron wavelength in thickness. The stretching of the layer having the conduction channel shift the energy levels of holes therein to remove the degenerate state thereof, thereby elevating light holes to an energy level characterized by increased mobility.

公开(公告)号：FR2394142A1

公开(公告)日：1979-01-05

申请号：FR7803452

申请日：1978-02-01

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO ,  SAI-HALASZ GEORGE A

IPC: G11C19/28 ,  G11C11/34 ,  G11C11/35 ,  G11C13/06 ,  H01L21/203 ,  H01L21/8247 ,  H01L29/15 ,  H01L29/788 ,  H01L29/792 ,  H01L29/861

公开(公告)号：FR2391769A1

公开(公告)日：1978-12-22

申请号：FR7802117

申请日：1978-01-20

Applicant: IBM

Inventor： CHANG CHIN-AN ,  CHANG LEROY L ,  ESAKI LEO

IPC: H01L33/00 ,  C30B23/02 ,  C30B23/08 ,  H01L21/02 ,  H01L21/203 ,  H01L21/268 ,  H01L47/00 ,  B01J17/26

公开(公告)号：CA1092723A

公开(公告)日：1980-12-30

申请号：CA294653

申请日：1978-01-10

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/76 ,  H01L29/88 ,  H01L29/267

Abstract: This high speed semiconductor device is similar to a transistor in that it is a three terminal device, but differs from such because, among other things, the dominant mechanism for transfer of charge from one region to another is tunneling. The device is comprised of three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and basecollector junctions are heterojunctions. The base region is sufficiently thin that change carriers can tunnel therethrough, ?he bandgap of the base region being so located with respect to the bandgap of the emitter and collector regions that very low leakage currents result. The base region has a small resistance due to its heavy doping which is greater than the doping of both the emitter and the collector. Both the valence band and the conduction band in the emitter and collector regions are shifted in the same directions with respect to the valence band and conduction band of the base region(i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities .DELTA.Ec and .DELTA.Ev). Any materials yielding the proper energy band diagram can be used; for example. Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.

公开(公告)号：FR2394174A1

公开(公告)日：1979-01-05

申请号：FR7803453

申请日：1978-02-01

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/76 ,  H01L29/88 ,  H01L29/72

Abstract: Device having three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and base-collector junctions are heterojunctions. The base region is sufficiently thin that charge carriers can tunnel therethrough. The base region has a small resistance due to its heavy doping (which is greater than the doping of both the emitter and the collector). Both the valence band and the conduction band in the emitter and collector regions are shifted in the same direction with respect to the valence band and conduction band of the base region (i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities DELTA Ec and DELTA Ev). Any materials yielding the proper energy band diagram can be used; for example, Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.