公开(公告)号：DE69008770D1

公开(公告)日：1994-06-16

申请号：DE69008770

申请日：1990-01-11

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO ,  MUNEKATA HIRO ,  OHNO HIDEO ,  VON MOLNAR STEPHAN

IPC: C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L21/20 ,  H01L21/203 ,  H01L43/10 ,  H01F1/00 ,  C30B29/40

公开(公告)号：BR9201840A

公开(公告)日：1993-01-05

申请号：BR9201840

申请日：1992-05-15

Applicant: IBM

Inventor： FUKUZAWA TODASHI ,  MUNEKATA HIRO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812 ,  H01L21/28

Abstract: Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

公开(公告)号：DE69008770T2

公开(公告)日：1994-11-24

申请号：DE69008770

申请日：1990-01-11

Applicant: IBM

Inventor： CHANG LEROY L ,  ESAKI LEO ,  MUNEKATA HIRO ,  OHNO HIDEO ,  VON MOLNAR STEPHAN

IPC: C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L21/20 ,  H01L21/203 ,  H01L43/10 ,  H01F1/00 ,  C30B29/40

公开(公告)号：CA2066002C

公开(公告)日：1996-01-30

申请号：CA2066002

申请日：1992-04-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIRO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812 ,  H01L21/20 ,  H01L21/321

Abstract: Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

公开(公告)号：CA2066002A1

公开(公告)日：1992-11-18

申请号：CA2066002

申请日：1992-04-14

Applicant: IBM

Inventor： FUKUZAWA TADASHI ,  MUNEKATA HIRO

IPC: H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812 ,  H01L21/20 ,  H01L21/321

Abstract: Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.