COPPER INTERCONNECTION STRUCTURE INCORPORATING A METAL SEED LAYER

    公开(公告)号:MY126479A

    公开(公告)日:2006-10-31

    申请号:MYPI19991382

    申请日:1999-04-09

    Applicant: IBM

    Abstract: THE PRESENT INVENTION DISCLOSES AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL COMMUNICATION WITH AN ELECTRONIC DEVICE (66) WHICH INCLUDES A BODY THAT IS FORMED SUBSTANTIALLY OF COPPER AND A SEED LAYER (76,78,86) OF EITHER A COPPER ALLOY OR A MTEAL THAT DOES NOT CONTAIN COPPER SANDWICH ED BETWEEN THE COPPER CONDUCTOR BODY AND THE ELECTRONIC DEVICE FOR IMPROVING THE ELETROMIGRATION RESISTANCE, THE ADHESION PROPERTY AND OTHER SURFACE PRORPERTIES OF THE INTERCONNECTION STRUCTURE. THE PRESENT INVENTION ALSO DISCLOSES, METHODS FOR FORMING AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL CONNECTIONS TO AN ELECTRONIC DEVICE (66) BY FIRST DEPOSITING A SEED LAYER (76,78,86) OF COPPER ALLOY OR OTHER METAL THAT DOES NOT CONTAIN COPPER ON AN ELECTRONIC DEVICE, AND THEN FORMING A COPPER CONDUCTOR BODY ON THE SEED LAYER INTIMATELY BONDING TO THE LAYER SUCH THAT ELECTROMIGRATION RESISTANCE, ADHESION AND OTHER SURFACE PROPERTIES OF THE INTERCONNECTION STRUCTURE ARE IMPROVED.(FIG 2)

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