公开(公告)号：MY126479A

公开(公告)日：2006-10-31

申请号：MYPI19991382

申请日：1999-04-09

Applicant: IBM

Inventor： DANIEL CHARLES EDELSTEIN ,  CYPRIAN EMEKA UZOH ,  JAMES MCKELL EDWIN HARPER ,  CHAO-KUN KU ,  ANDREW H SIMON

IPC: H01L21/44 ,  H01L21/3205 ,  H01L23/52 ,  H01L21/768 ,  H01L23/532

Abstract: THE PRESENT INVENTION DISCLOSES AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL COMMUNICATION WITH AN ELECTRONIC DEVICE (66) WHICH INCLUDES A BODY THAT IS FORMED SUBSTANTIALLY OF COPPER AND A SEED LAYER (76,78,86) OF EITHER A COPPER ALLOY OR A MTEAL THAT DOES NOT CONTAIN COPPER SANDWICH ED BETWEEN THE COPPER CONDUCTOR BODY AND THE ELECTRONIC DEVICE FOR IMPROVING THE ELETROMIGRATION RESISTANCE, THE ADHESION PROPERTY AND OTHER SURFACE PRORPERTIES OF THE INTERCONNECTION STRUCTURE. THE PRESENT INVENTION ALSO DISCLOSES, METHODS FOR FORMING AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL CONNECTIONS TO AN ELECTRONIC DEVICE (66) BY FIRST DEPOSITING A SEED LAYER (76,78,86) OF COPPER ALLOY OR OTHER METAL THAT DOES NOT CONTAIN COPPER ON AN ELECTRONIC DEVICE, AND THEN FORMING A COPPER CONDUCTOR BODY ON THE SEED LAYER INTIMATELY BONDING TO THE LAYER SUCH THAT ELECTROMIGRATION RESISTANCE, ADHESION AND OTHER SURFACE PROPERTIES OF THE INTERCONNECTION STRUCTURE ARE IMPROVED.(FIG 2)

公开(公告)号：SG91313A1

公开(公告)日：2002-09-17

申请号：SG200007014

申请日：2000-11-30

Applicant: IBM

Inventor： ERICK GREGORY WALTON ,  DEAN S CHUNG ,  LARA SANDRA COLLINS ,  WILLIAM E CORBIN ,  HARIKLIA DELIGIANNI ,  DANIEL CHARLES EDELSTEIN ,  JAMES E FLUEGEL ,  JOSEF WARREN KOREJWA ,  PETER S LOCKE ,  CYPRIAN EMEKA UZOH

IPC: C25D5/06 ,  C25D17/14 ,  C25D5/22 ,  C05D5/22 ,  C25D17/00 ,  H05K3/00

Abstract: A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.

公开(公告)号：SG101957A1

公开(公告)日：2004-02-27

申请号：SG200100731

申请日：2001-02-10

Applicant: IBM

Inventor： CHARLES R DAVIS ,  DANIEL CHARLES EDELSTEIN ,  JOHN C HAY ,  JEFFREY C HENDRICK ,  CHRISTOPHER JAHNES ,  VINCENT J MCGAHAY

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

公开(公告)号：SG101499A1

公开(公告)日：2004-01-30

申请号：SG200106666

申请日：2001-10-29

Applicant: IBM

Inventor： ANTHONY K STAMPER ,  ARNE W BALLANTINE ,  DANIEL CHARLES EDELSTEIN

IPC: H01C17/06 ,  H01C7/00 ,  H01C17/26 ,  H01L27/08 ,  H01L29/8605

Abstract: A method for increasing an electrical resistance of a resistor that is within a semiconductor structure. A fraction of a surface layer of the resistor is oxidized with oxygen particles. In an embodiment, the fraction of the surface layer is heated by a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen particles as gaseous oxygen-comprising molecules. In an embodiment, the semiconductor structure is immersed in a chemical solution which includes the oxygen particles, wherein the oxygen particles includes oxygen-comprising liquid molecules, oxygen ions, or an oxygen-comprising gas dissolved in the chemical solution under pressurization. In an embodiment, the resistor is tested to determine whether the electrical resistance of the resistor after being oxidized with the oxygen particles is within a tolerance of a predetermined target resistance.

公开(公告)号：SG99289A1

公开(公告)日：2003-10-27

申请号：SG1999004765

申请日：1999-09-22

Applicant: IBM

Inventor： VLASTA A BRUSIC ,  DANIEL CHARLES EDELSTEIN ,  PAUL M FENNEY ,  WILLIAM GUTHRIE ,  MARK JASO ,  FRANK B KAUFMAN ,  NAFTALI LUSTIG ,  PETER ROPER ,  KENNETH RODBELL ,  DAVID B THOMPSON

IPC: C09G1/02 ,  C09K13/04 ,  B24C11/00 ,  C23F3/00 ,  H01L21/321

Abstract: Copper or a copper alloy is removed by chemical-mechanical planarisation (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.

公开(公告)号：SG90233A1

公开(公告)日：2002-07-23

申请号：SG200100784

申请日：2001-02-13

Applicant: IBM

Inventor： CARLOS J SAMBUCETTI ,  DANIEL CHARLES EDELSTEIN ,  JOHN G GAUDIELLO ,  JUDITH M RUBINO ,  GEORGE WALKER

IPC: H05K3/34 ,  C23C18/16 ,  H01L21/60 ,  H01L23/12 ,  H01L23/485 ,  H01L23/532 ,  H05K3/24 ,  H05K13/06 ,  H01L23/522

Abstract: A method for preparing a copper pad surface for electrical connection that has superior diffusion barrier and adhesion properties is provided. In the method, a copper pad surface is first provided that has been cleaned by an acid solution, a protection layer of a phosphorus or boron-containing metal alloy is then deposited on the copper pad surface, and then an adhesion layer of a noble metal is deposited on top of the protection layer. The protection layer may be a single layer, or two or more layers intimately joined together formed of a phosphorus or boron-containing metal alloy such as Ni-P, Co-P, Co-W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B and Ni-W-B to a thickness between about 1,000 Å and about 10,000 Å. The adhesion layer can be formed of a noble metal such as Au, Pt, Pd and Ag to a thickness between about 500 Å and about 4,000 Å.