公开(公告)号：MY126479A

公开(公告)日：2006-10-31

申请号：MYPI19991382

申请日：1999-04-09

Applicant: IBM

Inventor： DANIEL CHARLES EDELSTEIN ,  CYPRIAN EMEKA UZOH ,  JAMES MCKELL EDWIN HARPER ,  CHAO-KUN KU ,  ANDREW H SIMON

IPC: H01L21/44 ,  H01L21/3205 ,  H01L23/52 ,  H01L21/768 ,  H01L23/532

Abstract: THE PRESENT INVENTION DISCLOSES AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL COMMUNICATION WITH AN ELECTRONIC DEVICE (66) WHICH INCLUDES A BODY THAT IS FORMED SUBSTANTIALLY OF COPPER AND A SEED LAYER (76,78,86) OF EITHER A COPPER ALLOY OR A MTEAL THAT DOES NOT CONTAIN COPPER SANDWICH ED BETWEEN THE COPPER CONDUCTOR BODY AND THE ELECTRONIC DEVICE FOR IMPROVING THE ELETROMIGRATION RESISTANCE, THE ADHESION PROPERTY AND OTHER SURFACE PRORPERTIES OF THE INTERCONNECTION STRUCTURE. THE PRESENT INVENTION ALSO DISCLOSES, METHODS FOR FORMING AN INTERCONNECTION STRUCTURE (50) FOR PROVIDING ELECTRICAL CONNECTIONS TO AN ELECTRONIC DEVICE (66) BY FIRST DEPOSITING A SEED LAYER (76,78,86) OF COPPER ALLOY OR OTHER METAL THAT DOES NOT CONTAIN COPPER ON AN ELECTRONIC DEVICE, AND THEN FORMING A COPPER CONDUCTOR BODY ON THE SEED LAYER INTIMATELY BONDING TO THE LAYER SUCH THAT ELECTROMIGRATION RESISTANCE, ADHESION AND OTHER SURFACE PROPERTIES OF THE INTERCONNECTION STRUCTURE ARE IMPROVED.(FIG 2)

公开(公告)号：SG118102A1

公开(公告)日：2006-01-27

申请号：SG200107602

申请日：2001-12-07

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  ROY ARTHUR CARRUTHERS ,  JAMES MCKELL EDWIN HARPER ,  CHAO-KUN HU ,  KIM YANG LEE ,  ISMAIL CEVDET NOYAN ,  ROBERT ROSENBERG ,  THOMAS MCCARROLL SHAW

IPC: H01L21/28 ,  B32B15/01 ,  C22C27/02 ,  H01L21/768 ,  H01L23/532 ,  H01L23/485

Abstract: An electrical conductor for use in an electronic structure is disclosed which includes a conductor body that is formed of an alloy including between about 0.001 atomic % and about 2 atomic % of an element selected from the group consisting of Ti, Zr, In, Sn and Hf; and a liner abutting the conductor body which is formed of an alloy that includes Ta, W, Ti, Nb and V. The invention further discloses a liner for use in a semiconductor interconnect that is formed of a material selected from the group consisting of Ti, Hf, In, Sn, Zr and alloys thereof, TiCu3, Ta1-XTix, Ta1-X, Hfx, Ta1-X, Inxy, Ta1-XSnx, Ta1-XZrx.