公开(公告)号：GB2635490A

公开(公告)日：2025-05-14

申请号：GB202504146

申请日：2023-05-18

Applicant: IBM

Inventor： JUNTAO LI ,  KANGGUO CHENG ,  CARL RADENS ,  CHING-TZU CHEN

IPC: H10N70/20 ,  H10B63/10

Abstract: A phase change memory structure with improved sidewall heater and formation thereof may be presented. Phase change materials are capable of being switched between a first structural state in which the material is in a generally amorphous solid phase, and a second structural state in which the material is in a generally crystalline solid phase in the active region of the cell. Presented herein may be a side wall heater, where the upper section extends through bilayer dielectric to contact a phase change material layer and the lower section of the sidewall heater has conductive layers in contact with the bottom electrode. The width of the sidewall heater may reflect an inverted T shape reducing the current requirement to reset the phase change material.