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    THERMALLY STABLE PHOTORESISTS WITH HIGH SENSITIVITY
    4.
    发明专利
    THERMALLY STABLE PHOTORESISTS WITH HIGH SENSITIVITY 未知

    公开(公告)号：CA1308594C

    公开(公告)日：1992-10-13

    申请号：CA542534

    申请日：1987-07-20

    Applicant: IBM

    Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

    IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

    5.
    发明专利
    未知

    公开(公告)号：DE3773061D1

    公开(公告)日：1991-10-24

    申请号：DE3773061

    申请日：1987-06-26

    Applicant: IBM

    Inventor： ALLEN ROBERT DAVID ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  MACDONALD SCOTT ARTHUR ,  YANG JER-MING ,  WILLSON CARLTON GRANT

    IPC: H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38

    Abstract: The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

    9.
    发明专利
    未知

    公开(公告)号：DE3687409D1

    公开(公告)日：1993-02-11

    申请号：DE3687409

    申请日：1986-10-21

    Applicant: IBM

    Inventor： CHOW MING-FEA ,  GUTHRIE WILLIAM LISLIE ,  KAUFMAN FRANK B

    IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  H01L21/90

    Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, in particular for electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric mate­rial is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric mate­rial, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric mate­rial becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

    TOP IMAGED AND ORGANOSILICON TREATED POLYMER LAYER DEVELOPABLE WITH PLASMA
    10.
    发明专利
    TOP IMAGED AND ORGANOSILICON TREATED POLYMER LAYER DEVELOPABLE WITH PLASMA 未知

    公开(公告)号：CA1267378A

    公开(公告)日：1990-04-03

    申请号：CA495093

    申请日：1985-11-12

    Applicant: IBM

    Inventor： CHIONG KAOLIN N ,  CHOW MING-FEA ,  YANG JER-MING

    IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26

    Abstract: FI9-64-046 TOP IMAGED PLASMA DEVELOPABLE RESISTS The present invention is concerned with a method of converting the upper portion of a layer of polymeric resist into a dry etch resistant form. Oxygen plasma can then be used to develop the entire resist structure. The layer of polymeric resist is exposed to patterned radiation which creates labile and reactive hydrogens within the resist by molecular rearrangement. The reactive hydrogens within the upper portion of the layer are subsequently reacted with a silylating reagent to form a dry etch resistant compound. When the polymeric resist material is highly absorbent of the radiation, the reactive hydrogens are created only in the upper portion of the layer; when the polymeric resist material is more transparent, the formation of the dry etch resistant upper portion must be controlled via the degree of penetration of the silylating reagent into the layer.

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