公开(公告)号：GB2566243B

公开(公告)日：2021-02-24

申请号：GB201900535

申请日：2017-05-10

Applicant: IBM

Inventor： CHAO-KUN HU ,  CHRISTIAN LAVOIE ,  STEPHEN ROSSNAGEL ,  THOMAS MCCARROLL SHAW

IPC: H01L21/768 ,  H01L23/532

Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.

公开(公告)号：GB2566243A

公开(公告)日：2019-03-06

申请号：GB201900535

申请日：2017-05-10

Applicant: IBM

Inventor： CHAO-KUN HU ,  CHRISTIAN LAVOIE ,  STEPHEN ROSSNAGEL ,  THOMAS MCCARROLL SHAW

IPC: H01L21/768 ,  H01L23/532

Abstract: Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric (114) over a Cu line (112) includes the steps of: forming at least one via (116) in the dielectric (114) over the Cu line (112); depositing a metal layer (118) onto the dielectric (114) and lining the via (116) such that the metal layer (118) is in contact with the Cu line (112) at the bottom of the via (116), wherein the metal layer (118) comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer (118) and the Cu line (112) under conditions sufficient to form a Cu intermetallic barrier (120) at the bottom of the via (116); and plating Cu (122) into the via (116) to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line (112) by the Cu intermetallic barrier (120). A device structure is also provided.

公开(公告)号：SG111054A1

公开(公告)日：2005-05-30

申请号：SG200202066

申请日：2002-04-08

Applicant: IBM

Inventor： CYRIL CABRAL JR ,  KEVIN K CHAN ,  GUY MOSHE COHEN ,  KATHRYN WILDER GUARINI ,  CHRISTIAN LAVOIE ,  PAUL MICHAEL SOLOMON ,  YING ZHANG

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786 ,  H01L21/84