公开(公告)号：AT498199T

公开(公告)日：2011-02-15

申请号：AT03719421

申请日：2003-03-19

Applicant: IBM

Inventor： CLARK WILLIAM ,  FRIED DAVID ,  LANZEROTTI LOUIS ,  NOWAK EDWARD

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786

Abstract: A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.

公开(公告)号：AT404996T

公开(公告)日：2008-08-15

申请号：AT04777432

申请日：2004-06-30

Applicant: IBM

Inventor： BRYANT ANDRES ,  CLARK WILLIAM ,  FRIED DAVID ,  JAFFE MARK ,  NOWAK EDWARD ,  PEKARIK JOHN ,  PUTNAM CHRISTOPHER

IPC: H01L29/06 ,  H01L21/00 ,  H01L21/308 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/786