公开(公告)号：WO02080267A3

公开(公告)日：2003-10-16

申请号：PCT/GB0201331

申请日：2002-03-20

Applicant: IBM ,  IBM UK

Inventor： LANZEROTTI LOUIS ,  MANN RANDY WILLIAM ,  MILES GLEN LESTER ,  MURPHY WILLIAM JOSEPH ,  VANSLETTE DANIEL SCOTT

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  H01L21/76855 ,  H01L21/76864

Abstract: A method of forming a liner (and resultant structure) in a contact for a semiconductor device includes depositing a first layer (201) of refractory metal, annealing the first layer, and sputter depositing a second layer (501) of refractory metal or a compound or an alloy thereof, over the first layer.

Abstract translation: 在半导体器件的接触中形成衬垫（和结构的结构）的方法包括沉积难熔金属的第一层（201），退火第一层，以及溅射沉积难熔金属或化合物的第二层（501） 或其合金，在第一层上。

公开(公告)号：JP2008153684A

公开(公告)日：2008-07-03

申请号：JP2008018552

申请日：2008-01-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L21/205 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a SiGe bipolar transistor substantially excluding dislocation defects present between an emitter and collector region.
SOLUTION: This forming method includes the steps of: (a) providing a structure including at least a bipolar device region, wherein the bipolar device region includes at least a first conductive type collector region 52 formed in a semiconductor substrate; (b) making a SiGe base region 54 deposit on the collector region, wherein carbon is continuously grown over the whole collector region and the whole SiGe base region during deposition; and (c) forming the emitter region 56 patterned on the SiGe base region.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成SiGe双极晶体管的方法，其基本上排除了发射极和集电极区域之间存在的位错缺陷。 该形成方法包括以下步骤：（a）提供包括至少双极器件区域的结构，其中双极器件区域至少包括形成在半导体衬底中的第一导电类型集电极区域52; （b）使SiGe基区54沉积在集电区上，其中在沉积期间碳在整个集电区和整个SiGe基区连续生长; 和（c）形成在SiGe基区上图案化的发射极区56。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：AT498199T

公开(公告)日：2011-02-15

申请号：AT03719421

申请日：2003-03-19

Applicant: IBM

Inventor： CLARK WILLIAM ,  FRIED DAVID ,  LANZEROTTI LOUIS ,  NOWAK EDWARD

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L29/786

Abstract: A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.

公开(公告)号：PL203317B1

公开(公告)日：2009-09-30

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

公开(公告)号：PL362710A1

公开(公告)日：2004-11-02

申请号：PL36271001

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

公开(公告)号：CZ20032066A3

公开(公告)日：2003-11-12

申请号：CZ20032066

申请日：2001-11-23

Applicant: IBM

Inventor： CHU JACK OON ,  COOLBAUGH DOUGLAS DUANE ,  DUNN JAMES STUART ,  GREENBERG DAVID ,  HARAME DAVID ,  JAGANNATHAN BASANTH ,  JOHNSON ROBB ALLEN ,  LANZEROTTI LOUIS ,  SCHONENBERG KATHRYN TURNER ,  WUTHRICH RYAN WAYNE

IPC: H01L21/331 ,  H01L29/737

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.