公开(公告)号：GB2562941B

公开(公告)日：2020-12-16

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG ,  JOHN KNICKERBOCKER

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：GB2562941A

公开(公告)日：2018-11-28

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JOHN KNICKERBOCKER ,  JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices (202, 302). In one embodiment, a release layer (210) is applied to a handler (204). The release layer (210) comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer (210). The additive comprises, for example, a 355nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600nm to 740nm. The at least one singulated semiconductor device (202) is bonded to the handler (204). The at least one singulated semiconductor device (202) is packaged while it is bonded to the handler (204). The release layer (210) is ablated by irradiating the release layer (210) through the handler (204) with a laser (214). The the at least one singulated semiconductor device (202) is removed from the transparent handler (204) after the release layer (210) has been ablated.