公开(公告)号：GB2562941B

公开(公告)日：2020-12-16

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG ,  JOHN KNICKERBOCKER

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：GB2543224B

公开(公告)日：2017-11-08

申请号：GB201701252

申请日：2015-11-03

Applicant: IBM

Inventor： PAUL S ANDRY ,  JEFFREY GELORME ,  CORNELIA K TSANG ,  BUCKNELL WEBB

IPC: H01L21/683 ,  B32B7/12

公开(公告)号：GB2562941A

公开(公告)日：2018-11-28

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JOHN KNICKERBOCKER ,  JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices (202, 302). In one embodiment, a release layer (210) is applied to a handler (204). The release layer (210) comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer (210). The additive comprises, for example, a 355nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600nm to 740nm. The at least one singulated semiconductor device (202) is bonded to the handler (204). The at least one singulated semiconductor device (202) is packaged while it is bonded to the handler (204). The release layer (210) is ablated by irradiating the release layer (210) through the handler (204) with a laser (214). The the at least one singulated semiconductor device (202) is removed from the transparent handler (204) after the release layer (210) has been ablated.

公开(公告)号：GB2548726A

公开(公告)日：2017-09-27

申请号：GB201707907

申请日：2015-10-19

Applicant: IBM

Inventor： JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  CORNELIA KANG-I TSANG ,  JOHN KNICKER-BOCKER ,  ROBERT DAVID ALLEN

IPC: H01L21/683

Abstract: A method for adhesive bonding in microelectronic device processing is provided that includes bonding a handling wafer to a front side of a device wafer with an adhesive comprising phenoxy resin; and thinning the device wafer from the backside of the device wafer while the device wafer is adhesively engaged to the handling wafer. After the device wafer has been thinned, the adhesive comprising phenoxy resin may be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

公开(公告)号：GB2543224A

公开(公告)日：2017-04-12

申请号：GB201701252

申请日：2015-11-03

Applicant: IBM

Inventor： PAUL S ANDRY ,  JEFFREY GELORME ,  CORNELIA K TSANG ,  BUCKNELL WEBB

IPC: H01L21/683 ,  B32B7/12

Abstract: The absorption properties of both an adhesive layer and an ablation layer are employed to facilitate debonding of a device wafer and a glass handler without damaging the device wafer. The penetration depths of the adhesive and ablation layers are selected such that no more than a negligible amount of the ablation fluence reaches the surface of the device wafer.