公开(公告)号：JP2004158864A

公开(公告)日：2004-06-03

申请号：JP2003412413

申请日：2003-12-10

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KHARE MUKESH V ,  D EMIC CHRISTOPHER P ,  HWANG THOMAS T ,  JAMISON PAUL C ,  QUINLIVAN J J ,  WARD BETH A

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28202 ,  H01L21/2822 ,  H01L21/3144 ,  H01L29/518

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a gate dielectric for an integrated circuit device.
SOLUTION: The method includes forming an initial oxynitride layer having an initial physical thickness on a substrate material. The initial oxynitride layer is then subjected to a plasma nitridation. Consequently, a final oxynitride layer having a final physical thickness is acquired. In one embodiment, the final physical thickness is less than 20Å exceeding the initial physical thickness by less than 5Å. Finally, the nitrogen concentration in the final oxynitride layer is at least 2.0×10
15 atoms/cm
2 . In one embodiment, the initial oxynitride layer is formed on the substrate by ionically implantating nitrogen atoms into the substrate. After implantation of nitrogen atoms, the substrate is oxidized. In an alternative embodiment, the initial oxynitride layer is formed on the substrate by rapid thermal nitric oxide (NO) deposition.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003142483A

公开(公告)日：2003-05-16

申请号：JP2002212018

申请日：2002-07-22

Applicant: IBM

Inventor： GOUSEV EVGENI ,  AJMERA ATUL C ,  D EMIC CHRISTOPHER P

IPC: H01L21/318 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an extremely thin gate dielectric for an integrated circuit device. SOLUTION: This method comprises steps of forming a nitride layer on a substrate by heating a silicon substrate 200 for a short time in the presence of an ammonia gas and reoxidizing the nitride layer to form an oxynitride layer 204 by heating the nitride layer for a short time in the presence of an nitrogen oxide gas. The oxynitride layer has nitrogen concentration of about 1.0×10 atoms/cm to about 6.0×10 atoms/cm , and a thickness limited in the range of less than 10 Å. The step of forming the nitride layer includes a step of heating a substrate for a short time in the presence of an ammonia gas with a temperature of about 650-1,000 deg.C and pressure of about 7.50×10 Pa to about 5.70 Pa. The step of reoxidizing the nitride layer includes a step of heating the nitride layer for a short time in the presence of a nitrogen oxide gas with a temperature of about 650-1,000 deg.C and pressure of about 7.50×10 Pa to about 5.70 Pa.

公开(公告)号：JP2002353218A

公开(公告)日：2002-12-06

申请号：JP2002072532

申请日：2002-03-15

Applicant: IBM

Inventor： KHARE MUKESH V ,  D EMIC CHRISTOPHER P ,  HWANG THOMAS T ,  JAMISON PAUL C ,  QUINLIVAN J J ,  WARD BETH A

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a gate dielectric for an integrated circuit device. SOLUTION: An initial oxynitride layer having an initial physical thickness is formed on a substrate. Then a plasma nitride forming treatment is applied for the initial oxynitride layer, and the final oxynitride layer having the final physical thickness is formed. In a first embodiment, the final physical thickness is less than 20 Åexceeding the initial physical thickness by less than 5 Å. Eventually, the nitrogen concentration in the final oxynitride layer is 2.0×10 atoms/cm or more. In a first embodiment, the initial oxynitride layer is formed on the substrate by ion implantation of nitrogen atoms. After implantation of nitrogen atoms, the substrate is heated. In an alternative embodiment, the initial oxynitride layer is formed on the substrate by a rapid heat oxynitride deposition.