公开(公告)号：EP1661163A4

公开(公告)日：2008-08-06

申请号：EP04782258

申请日：2004-08-26

Applicant: IBM

Inventor： BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

IPC: H01L21/28 ,  H01L20060101 ,  H01L21/31 ,  H01L21/314 ,  H01L21/336 ,  H01L21/469 ,  H01L29/51

CPC classification number: H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A). The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

公开(公告)号：JP2004158864A

公开(公告)日：2004-06-03

申请号：JP2003412413

申请日：2003-12-10

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： KHARE MUKESH V ,  D EMIC CHRISTOPHER P ,  HWANG THOMAS T ,  JAMISON PAUL C ,  QUINLIVAN J J ,  WARD BETH A

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L21/28202 ,  H01L21/2822 ,  H01L21/3144 ,  H01L29/518

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a gate dielectric for an integrated circuit device.
SOLUTION: The method includes forming an initial oxynitride layer having an initial physical thickness on a substrate material. The initial oxynitride layer is then subjected to a plasma nitridation. Consequently, a final oxynitride layer having a final physical thickness is acquired. In one embodiment, the final physical thickness is less than 20Å exceeding the initial physical thickness by less than 5Å. Finally, the nitrogen concentration in the final oxynitride layer is at least 2.0×10
15 atoms/cm
2 . In one embodiment, the initial oxynitride layer is formed on the substrate by ionically implantating nitrogen atoms into the substrate. After implantation of nitrogen atoms, the substrate is oxidized. In an alternative embodiment, the initial oxynitride layer is formed on the substrate by rapid thermal nitric oxide (NO) deposition.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002353218A

公开(公告)日：2002-12-06

申请号：JP2002072532

申请日：2002-03-15

Applicant: IBM

Inventor： KHARE MUKESH V ,  D EMIC CHRISTOPHER P ,  HWANG THOMAS T ,  JAMISON PAUL C ,  QUINLIVAN J J ,  WARD BETH A

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a gate dielectric for an integrated circuit device. SOLUTION: An initial oxynitride layer having an initial physical thickness is formed on a substrate. Then a plasma nitride forming treatment is applied for the initial oxynitride layer, and the final oxynitride layer having the final physical thickness is formed. In a first embodiment, the final physical thickness is less than 20 Åexceeding the initial physical thickness by less than 5 Å. Eventually, the nitrogen concentration in the final oxynitride layer is 2.0×10 atoms/cm or more. In a first embodiment, the initial oxynitride layer is formed on the substrate by ion implantation of nitrogen atoms. After implantation of nitrogen atoms, the substrate is heated. In an alternative embodiment, the initial oxynitride layer is formed on the substrate by a rapid heat oxynitride deposition.

公开(公告)号：WO2005020291A2

公开(公告)日：2005-03-03

申请号：PCT/US2004027740

申请日：2004-08-26

Applicant: IBM ,  BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

Inventor： BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

IPC: H01L20060101 ,  H01L21/31 ,  H01L21/336 ,  H01L21/469 ,  H01L

CPC classification number: H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A). The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

Abstract translation: 一种制造栅极电介质层的方法，包括：提供衬底（100）; 在所述衬底（105）的顶表面上形成二氧化硅层（110）; 在还原气氛中进行等离子体氮化，将二氧化硅层转换成氮氧化硅层（110A）。 如此形成的电介质层可用于制造MOSFET（145）。