公开(公告)号：JP2012247777A

公开(公告)日：2012-12-13

申请号：JP2012110215

申请日：2012-05-14

Applicant: Shin Etsu Chem Co Ltd ,  信越化学工業株式会社 ,  Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： TACHIBANA SEIICHIRO ,  NODA KAZUMI ,  OHASHI MASAKI ,  KANAO TAKESHI ,  U SUNG HWAN ,  DARIO GOLDFARB ,  KING Y LEE ,  MARTIN GRODE

IPC: G03F7/11 ,  H01L21/027

CPC classification number: G03F7/038 ,  G03F7/0046 ,  G03F7/091

Abstract: PROBLEM TO BE SOLVED: To provide a material for absorbing near-infrared light for use in an optical auto-focus, and a laminated film including a near-infrared absorbing film formed of the material and a photoresist film.SOLUTION: A near-infrared light absorbing film formation material contains (A) a polymer compound containing at least one kind of formulas (1) to (4); (B) a polymer compound containing an aromatic ring (except for the (A) component); (C) a near-infrared light absorbing dye and (D) a solvent. (In the formulas, R, R, Rand Rare H, CH, F or CF; Rto Rare H, F, CF, -C(CF)OR, an alkyl group or an alkoxy group; one or more of Rto Ris a fluorine atom or a group containing fluorine; R, Rand Rare H or a monovalent organic group; and Ris a hydrocarbon group substituted by a fluorine atom.)

Abstract translation: 要解决的问题：提供一种用于吸收用于光学自动对焦的近红外光的材料，以及包括由该材料形成的近红外线吸收膜和光致抗蚀剂膜的层压膜。 解决方案：近红外光吸收膜形成材料包含（A）含有至少一种式（1）至（4）的高分子化合物; （B）含有芳环的高分子化合物（（A）成分除外）。 （C）近红外光吸收染料和（D）溶剂。 （在公式中，R 1 ，R 7 ，R 9 和 R 14 是H，CH 3 ，F或CF 3 ; R 2 到R 6 是H，F，CF 3 ，-C （CF 3 ） 2 或 16 ，烷基或烷氧基 一个或多个R 2 到R 6 是氟原子或含氟的基团; R 16 ，R 8 和R 13 是H或一价有机基团; SP POS =“POST”> 15 是被氟原子取代的烃基。）版权所有（C）2013，JPO＆INPIT

公开(公告)号：GB2583206A

公开(公告)日：2020-10-21

申请号：GB202007913

申请日：2018-12-04

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

IPC: H01L21/302

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

公开(公告)号：GB2585586A

公开(公告)日：2021-01-13

申请号：GB202014174

申请日：2019-02-14

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  RUDY J WOJTECKI ,  DARIO GOLDFARB ,  DANIEL PAUL SANDERS ,  NELSON FELIX

IPC: C08F4/00 ,  C08G83/00 ,  G03F7/30

Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

公开(公告)号：GB2583206B

公开(公告)日：2022-09-07

申请号：GB202007913

申请日：2018-12-04

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

IPC: H01L21/302 ,  G03F7/11 ,  H01L21/027

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.