公开(公告)号：GB2583206A

公开(公告)日：2020-10-21

申请号：GB202007913

申请日：2018-12-04

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

IPC: H01L21/302

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

公开(公告)号：GB2580279A

公开(公告)日：2020-07-15

申请号：GB202007787

申请日：2018-11-15

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  ABRAHAM ARCEO DE LA PENA ,  NELSON FELIX

IPC: H01L21/033

Abstract: The invention herein includes enhancing the surface of an amorphous silicon hardmask through implantation of nonpolar, hydrophobic elements, resulting in increased hydrophobicity and increased resist adhesion of the amorphous silicon surface. According to the invention, implanting the hydrophobic elements may involve introduction of the hydrophobic elements into the surface of the amorphous silicon by way of low energy implantation and plasma treatment. The implanted hydrophobic element may be Boron, Xenon, Fluorine, Phosphorus, a combination thereof, or other hydrophobic elements. According to the invention, the surface of the amorphous silicon is enhanced with 10-15% hydrophobic element, however in other embodiments, this composition may be adjusted as needed. In any case, however, the invention herein includes maintaining an etch selectivity of the bulk amorphous silicon hardmask.

公开(公告)号：GB2583206B

公开(公告)日：2022-09-07

申请号：GB202007913

申请日：2018-12-04

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

IPC: H01L21/302 ,  G03F7/11 ,  H01L21/027

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

公开(公告)号：GB2585586A

公开(公告)日：2021-01-13

申请号：GB202014174

申请日：2019-02-14

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  RUDY J WOJTECKI ,  DARIO GOLDFARB ,  DANIEL PAUL SANDERS ,  NELSON FELIX

IPC: C08F4/00 ,  C08G83/00 ,  G03F7/30

Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

公开(公告)号：GB2580279B

公开(公告)日：2020-12-16

申请号：GB202007787

申请日：2018-11-15

Applicant: IBM

Inventor： EKMINI ANUJA DE SILVA ,  ABRAHAM ARCEO DE LA PENA ,  NELSON FELIX

IPC: H01L21/033

Abstract: The invention herein includes enhancing the surface of an amorphous silicon hardmask through implantation of nonpolar, hydrophobic elements, resulting in increased hydrophobicity and increased resist adhesion of the amorphous silicon surface. According to the invention, implanting the hydrophobic elements may involve introduction of the hydrophobic elements into the surface of the amorphous silicon by way of low energy implantation and plasma treatment. The implanted hydrophobic element may be Boron, Xenon, Fluorine, Phosphorus, a combination thereof, or other hydrophobic elements. According to the invention, the surface of the amorphous silicon is enhanced with 10-15% hydrophobic element, however in other embodiments, this composition may be adjusted as needed. In any case, however, the invention herein includes maintaining an etch selectivity of the bulk amorphous silicon hardmask.