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    Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
    1.
    发明专利
    Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography 未知

    公开(公告)号：GB2583206B

    公开(公告)日：2022-09-07

    申请号：GB202007913

    申请日：2018-12-04

    Applicant: IBM

    Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

    IPC: H01L21/302 ,  G03F7/11 ,  H01L21/027

    Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

    Photoactive polymer brush materials and EUV patterning using the same
    4.
    发明专利
    Photoactive polymer brush materials and EUV patterning using the same 未知

    公开(公告)号：GB2585586A

    公开(公告)日：2021-01-13

    申请号：GB202014174

    申请日：2019-02-14

    Applicant: IBM

    Inventor： EKMINI ANUJA DE SILVA ,  RUDY J WOJTECKI ,  DARIO GOLDFARB ,  DANIEL PAUL SANDERS ,  NELSON FELIX

    IPC: C08F4/00 ,  C08G83/00 ,  G03F7/30

    Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

    Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
    7.
    发明专利
    Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography 未知

    公开(公告)号：GB2583206A

    公开(公告)日：2020-10-21

    申请号：GB202007913

    申请日：2018-12-04

    Applicant: IBM

    Inventor： EKMINI ANUJA DE SILVA ,  DARIO GOLDFARB ,  NELSON FELIX ,  DANIEL CORLISS ,  RUDY J WOJTECKI

    IPC: H01L21/302

    Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

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