公开(公告)号：FR2344847A1

公开(公告)日：1977-10-14

申请号：FR7702072

申请日：1977-01-18

Applicant: IBM

Inventor： DEINES JOHN L ,  POPONIAK MICHAEL R ,  SCHWENKER ROBERT O

IPC: H01L21/66 ,  G01N27/00 ,  G01R31/26 ,  H01L21/306

公开(公告)号：CA1069221A

公开(公告)日：1980-01-01

申请号：CA272839

申请日：1977-02-28

Applicant: IBM

Inventor： DEINES JOHN L ,  POPONIAK MICHAEL R ,  SCHWENKER ROBERT O

IPC: H01L21/66 ,  G01N27/00 ,  G01R31/26 ,  H01L21/306

Abstract: ANODIC ETCHING METHOD FOR THE DETECTION OF ELECTRICALLY ACTIVE DEFECTS IN SILICON Electrically active defects, i.e., current-carrying defects or leakage paths in silicon crystals, are detected by an anodization process. The process selectively etches the crystal surface only where the electrically active defects are located when the anodization parameters are properly selected. Selected surface portions of the silicon structure are exposed to a hydrofluoric acid solution which is maintained at a negative potential with respect to the silicon structure. When the potential difference is set to a proper value, etch pits are formed in the surface of the silicon only at those locations overlying electrically active defects which impact device yield. The defects are observed and counted to provide a basis to predict yield of desired semiconductor devices to be formed later in the silicon structure.

公开(公告)号：FR2357067A1

公开(公告)日：1978-01-27

申请号：FR7716061

申请日：1977-05-18

Applicant: IBM

Inventor： DEINES JOHN L ,  KU SAN-MEI ,  POPONIAK MICHAEL R ,  TSANG PAUL J

IPC: C30B25/02 ,  C30B29/36 ,  H01L21/04 ,  H01L21/205 ,  H01L21/762 ,  H01L29/267 ,  H01L21/314

Abstract: A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050 DEG C to 1250 DEG C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.