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公开(公告)号：WO0247177A3
公开(公告)日：2002-12-05
申请号：PCT/GB0105193
申请日：2001-11-23
Inventor： GHOSHAL UTTAM SHYAMALINDU , CORDES STEVEN , DIMILIA DAVID , DOYLE JAMES , SPEIDELL JAMES
Abstract: A thermoelectric device with enhanced structured interfaces for improved cooling efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement comprising a superlattice of p-type thermoelectric material and a second thermoelement comprising superlattice of n-type thermoelectric material. The first and second thermoelements are electrically coupled to each other. The planer surface of the first thermoelement is proximate to, without necessarily being in physical contact with, a first array of electrically conducting tips at a discrete set of points such that electrical conduction between the planer surface of the first thermoelement and the first array of electrically conducting tips is facilitated while thermal conductivity between the two is retarded. A planer surface of the second thermoelement is proximate to, without necessarily being in physical contact with, a second array of electrically conducting tips at a discrete set of points such that electrical conduction between the electrically conducting tips and the planer surface of the second thermoelement is facilitated while thermal conduction between the two is retarded. The electrically conducting tips are coated with a material that has the same Seebeck coefficient as the material of the nearest layer of the superlattice to the tip.
Abstract translation: 提供具有增强的结构化界面以提高冷却效率的热电装置。 在一个实施例中，热电装置包括包含p型热电材料的超晶格的第一热电元件和包含n型热电材料的超晶格的第二热电元件。 第一和第二热电元件彼此电连接。 第一热电元件的平面表面在不连续的一组点处与第一导电尖端阵列接近，而不必与其物理接触，使得第一热电元件的平面表面和第一电气电极阵列之间的电传导 导电尖端被促进，而两者之间的热传导被阻滞。 第二热电元件的平面表面在不连续的一组点处与第二导电尖端阵列接近，而不需要物理接触，使得导电尖端和第二热电元件的平面表面之间的电传导是 而两者之间的热传导被推迟。 导电尖端涂有塞贝克系数与最接近尖端超晶格层的材料相同的材料。
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公开(公告)号：CA2427427A1
公开(公告)日：2002-06-13
申请号：CA2427427
申请日：2001-11-23
Applicant: IBM
Inventor： DOYLE JAMES , SPEIDELL JAMES , CORDES STEVEN , GHOSHAL UTTAM SHYAMALINDU , DIMILIA DAVID
Abstract: A thermoelectric device with enhanced structured interfaces for improved cooling efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement comprising a superlattice of p-type thermoelectric material and a second thermoelement comprising superlattice of n-type thermoelectric material. The first and second thermoelements are electrically coupled to each other. The planer surface of the first thermoelement is proximate to, without necessarily being in physical contact with, a first array of electrically conducting tips at a discrete set of points such that electrical conduction between the planer surface of the first thermoelement and the first array of electrically conducting tips is facilitated while thermal conductivity between the two is retarded. A planer surface of the second thermoelement is proximate to, without necessarily being in physical contact with, a second array of electrically conducting tips at a discrete set of points such that electrical conduction between the electrically conducting tips and the planer surface of the second thermoelement is facilitated while thermal conduction between the two is retarded. The electrically conducting tips are coated with a material that has the same Seebeck coefficient as the material of the nearest layer of the superlattice to the tip.
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公开(公告)号：AU2388802A
公开(公告)日：2002-06-18
申请号：AU2388802
申请日：2001-11-23
Applicant: IBM
Inventor： CORDES STEVEN , DIMILIA DAVID , DOYLE JAMES , SPEIDELL JAMES
Abstract: A thermoelectric device with enhanced structured interfaces for improved cooling efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement comprising a supetlattice of p-type thermoelectric material and a second thermoelement comprising superlattice of n-type thermoelectric material. The first and second thermoelements are electrically coupled to each other. The first thermoelement is proximate to, without necessarily being in physical contact with, a first array of electrically conducting tips at a discrete set of points. A planer surface of the second thermoelement is proximate to, without necessarily being in physical contact with, a second array of electrically conducting tips at a discrete set of points. The electrically conducting tips are coated with a material that has the same Seebeck coefficient as the material of the nearest layer of the superlattice to the tip.
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公开(公告)号：AU8788101A
公开(公告)日：2002-04-29
申请号：AU8788101
申请日：2001-09-17
Applicant: IBM
Inventor： DIMILIA DAVID , HUANG LIJUAN
IPC: H01L21/331 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/338 , H01L21/762 , H01L27/12 , H01L29/161 , H01L29/737 , H01L29/778 , H01L29/786 , H01L29/812 , H01L29/861 , H01L31/10
Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.
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