公开(公告)号：AT464654T

公开(公告)日：2010-04-15

申请号：AT01972244

申请日：2001-09-27

Applicant: IBM

Inventor： CANAPERI DONALD ,  CHU JACK ,  D EMIC CHRISTOPHER ,  HUANG LIJUAN ,  OTT JOHN ,  WONG HON-SUM

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.

公开(公告)号：DE60141843D1

公开(公告)日：2010-05-27

申请号：DE60141843

申请日：2001-09-27

Applicant: IBM

Inventor： CANAPERI DONALD ,  CHU JACK OON ,  D EMIC CHRISTOPHER ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.

公开(公告)号：MY126089A

公开(公告)日：2006-09-29

申请号：MYPI20014195

申请日：2001-09-06

Applicant: IBM

Inventor： CANAPERI DONALD F ,  CHU JACK OON ,  EMIC CHRISTOPHER P D ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A METHOD FOR FORMING STRAINED SI OR SIGE ON RELAXED SIGE ON INSULATOR (SGOJ) IS DESCRIBED INCORPORATING GROWING EPITAXIAL SI1GE LAYERS ON A SEMICONDUCTOR SUBSTRATE, IMPLANTING HYDROGEN INTO A SELECTED SI1..GE LAYER TO FORM A HYDROGENERICH DEFECTIVE LAYER, SMOOTHING SURFACES BY CHEMO-MECHANICAL POLISHING, BONDING TWO SUBSTRATES TOGETHER VIA THEXMAL TREATMENTS AND SEPARATING TWO SUBSTRATES AT THE HYDROGEN-RICH DEFECTIVE LAYER. THE SEPARATED SUBSTRATES MAY HAVE ITS UPPER SURFACE SMOOTHED BY CMI’ FOR EPITAXIAL DEPOSITION OF RELAXED SI,GE,,, AND STRAINED SI1GE DEPENDING UPON COMPOSITION, STRAINED SI, STRAINED SIC, STRAINED GE, STRAINED GEC, AND STRAINED SI3GEC.

公开(公告)号：AU8788101A

公开(公告)日：2002-04-29

申请号：AU8788101

申请日：2001-09-17

Applicant: IBM

Inventor： DIMILIA DAVID ,  HUANG LIJUAN

IPC: H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/762 ,  H01L27/12 ,  H01L29/161 ,  H01L29/737 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812 ,  H01L29/861 ,  H01L31/10

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

公开(公告)号：AU9202401A

公开(公告)日：2002-04-08

申请号：AU9202401

申请日：2001-09-27

Applicant: IBM

Inventor： CHU JACK OON ,  EMIC CHRISTOPHER D ,  HUANG LIJUAN ,  OTT JOHN ALBERT ,  WONG HON-SUM PHILIP

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, implanting hydrogen into a selected Si1-yGey layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC.