公开(公告)号：EP1756856A4

公开(公告)日：2010-02-17

申请号：EP05755089

申请日：2005-05-31

Applicant: IBM

Inventor： DUNN DERREN N ,  KIM HYUNGJUN ,  ROSSNAGEL STEPHEN M ,  SEO SOON-CHEON

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/52 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP2005311366A

公开(公告)日：2005-11-04

申请号：JP2005119003

申请日：2005-04-15

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CLEVENGER LAWRENCE A ,  CHIRAS STEFANIE R ,  DALTON TIMOTHY ,  DEMAREST JAMES J ,  DUNN DERREN N ,  DZIOBKOWSKI CHESTER T ,  FLAITZ PHILIP L ,  LANE MICHAEL W ,  LLOYD JAMES R ,  DARYL D RESUTAINO ,  SHAW THOMAS M ,  WANG YUN YU ,  YANG CHIH-CHAO

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To realize an interconnection structure that improves the adhesion between an upper low-k dielectric layer and a diffusion barrier cap dielectric layer existing therebeneath. SOLUTION: In the interconnection structure, adhesion between the upper low-k (for example, the dielectric coefficient is less than 4.0) dielectric layer (for example, a dielectric containing an element group consisting of Si, C, O, and H) and the diffusion barrier cap dielectric layer (for example, a cap layer containing an element group consisting of C, Si, N, and H) existing therebeneath is improved, by providing an adhesion transition layer in between the two layers. Because the adhesion transition layer exists between the upper low-k dielectric layer and the diffusion barrier cap dielectric layer, the possibility that the layers in the interconnection structure are separated in a packaging process is reduced. The adhesion transition layer provided here comprises a lower SiO x (or SiON) contained region and an upper C inclination region. Such a structure and, in particular, a method for forming an adhesion transition layer are also provided. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：实现改善上部低k电介质层和存在于其之间的扩散阻挡盖电介质层之间的粘附性的互连结构。 解决方案：在互连结构中，上部低k（例如，介电系数小于4.0）电介质层（例如，包含由Si，C，O和 H）和扩散阻挡盖电介质层（例如，包含由C，Si，N和H构成的元素组的覆盖层）提高，通过在两层之间提供粘合过渡层。 由于粘附过渡层存在于上部低k电介质层和扩散阻挡层电介质层之间，因此在封装过程中互连结构中的层分离的可能性降低。 这里提供的粘合过渡层包含较低的SiO xS（或SiON）含有区域和上C倾斜区域。 还提供了这种结构，特别是形成粘附过渡层的方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2005122253A3

公开(公告)日：2006-12-14

申请号：PCT/US2005018953

申请日：2005-05-31

Applicant: IBM ,  DUNN DERREN N ,  KIM HYUNGJUN ,  ROSSNAGEL STEPHEN M ,  SEO SOON-CHEON

Inventor： DUNN DERREN N ,  KIM HYUNGJUN ,  ROSSNAGEL STEPHEN M ,  SEO SOON-CHEON

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/52 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of depositing a tantalum nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer (104) on the low-k material substrate (102) by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer (104) has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region (108) so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaC1 5 ). The invention generates a sharp interface between low-k materials and liner materials.

Abstract translation: 在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。 所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强的原子层沉积（PE-ALD）在低k材料衬底（102）上形成保护层（104）。 保护层（104）的氮含量大于钽的含量。 然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。 本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域（108）。 在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。 本发明在低k材料和衬垫材料之间产生尖锐的界面。