公开(公告)号：JP2001066767A

公开(公告)日：2001-03-16

申请号：JP2000209547

申请日：2000-07-11

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  ARI AVIRAMU ,  EDWARD D BAABICHI ,  TIMOTHY ARAN BRANNER ,  THOMAS BENJAMIN FAURE ,  C RICHARD GUARNIERI ,  KWONG RANEE W ,  PETRILLO KAREN E

IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a resist composition, having responsiveness to imaging irradiation and enhanced resistance to reactive ion etching by incorporating a radiation sensitive polymer and an organometallic compound of a specified metal. SOLUTION: This resist composition contains a radiation responsive polymer and an organometallic compound of a metal selected from among the group comprising yttrium, aluminum, iron, titanium, zirconium, hafnium and a mixture of these. The organometallic compound is, e.g. yttrium trishexafluoroacetylacetonate or yttrium tris(2,2,6,6-tetramethyl)-3,5-heptanedioate and the amount of the organometallic compound used is about 0.1-25 wt.% of the weight of the radiation sensitive polymer. The organometallic compound may be used in combination with various resist polymers including a chemically amplified resist and a non-chemically amplified resist.